Product Information

25LC640X-I/ST

25LC640X-I/ST electronic component of Microchip

Datasheet
EEPROM Serial-SPI 64K-bit 8K x 8 3.3V/5V 8-Pin TSSOP Tube

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

100: USD 1.105 ea
Line Total: USD 110.5

2910 - Global Stock
Ships to you between
Wed. 22 May to Tue. 28 May
MOQ: 100  Multiples: 100
Pack Size: 100
Availability Price Quantity
2910 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 100
Multiples : 100

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25LC640X-I/ST
Microchip

100 : USD 1.105
300 : USD 1.0588
500 : USD 1.0425
1000 : USD 1.0013
2500 : USD 0.95
5000 : USD 0.9362
7500 : USD 0.9225
10000 : USD 0.9088

2024 - WHS 2


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

25LC640X-I/ST
Microchip

1 : USD 1.0212
25 : USD 0.9948
100 : USD 0.9522

2910 - WHS 3


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 100
Multiples : 100

Stock Image

25LC640X-I/ST
Microchip

100 : USD 1.3665
300 : USD 1.2732
500 : USD 1.2477

     
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25XX640 25XX640 25AA640/25LC640 64K SPI Bus Serial EEPROM Device Selection Table Description The Microchip Technology Inc. 25AA640/25LC640 Part VCC Max Clock Temp * (25XX640 ) is a 64 Kbit Serial Electrically Erasable Number Range Frequency Ranges PROM EEPROM . The memory is accessed via a 25AA640 1.8-5.5V 1 MHz I simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input 25LC640 2.5-5.5V 2 MHz I (SCK) plus separate data in (SI) and data out (SO) 25LC640 4.5-5.5V 3/2.5 MHz I, E lines. Access to the device is controlled through a Chip Select (CS) input. Features Communication to the device can be paused via the Low-power CMOS technology hold pin (HOLD). While the device is paused, - Write current: 3 mA typical transitions on its inputs will be ignored, with the - Read current: 500 A typical exception of Chip Select, allowing the host to service higher priority interrupts. - Standby current: 500 nA typical 8192 x 8 bit organization Block Diagram 32 byte page Status Write cycle time: 5 ms max. HV Generator Register Self-timed erase and write cycles Block write protection - Protect none, 1/4, 1/2 or all of array Built-in write protection EEPROM - Power on/off data protection circuitry Memory I/O Control Array Control - Write enable latch XDEC Logic Logic - Write-protect pin Page Sequential read Latches High reliability - Data retention: > 200 years SI - ESD protection: > 4000V SO Y Decoder 8-pin PDIP, SOIC and TSSOP packages CS Temperature ranges supported: SCK - Industrial (I): -40C to +85C Sense Amp. HOLD R/W Control - Automotive (E): -40C to +125C WP VCC VSS Package Types PDIP/SOIC TSSOP VCC CS 1 8 1 8 SCK HOLD 7 VCC 2 SI SO 2 7 HOLD CS 3 6 VSS SCK SO 4 5 WP WP 3 6 VSS 4 5 SI *25XX640 is used in this document as a generic part number for the 25AA640/25LC640 devices. SPI is a registered trademark of Motorola Corporation. 2004 Microchip Technology Inc. DS21223G-page 125AA640/25LC640 1.0 ELECTRICAL CHARACTERISTICS () Absolute Maximum Ratings VCC.............................................................................................................................................................................7.0V All inputs and outputs w.r.t. VSS ........................................................................................................ -0.6V to VCC + 1.0V Storage temperature .................................................................................................................................-65C to 150C Ambient temperature under bias...............................................................................................................-65C to 125C ESD protection on all pins..........................................................................................................................................4 kV NOTICE: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an extended period of time may affect device reliability. TABLE 1-1: DC CHARACTERISTICS Industrial (I): TA = -40C to +85C VCC = 1.8V to 5.5V DC CHARACTERISTICS Automotive (E): TA = -40C to +125C VCC = 4.5V to 5.5V Param. Sym Characteristics Min Max Units Conditions No. D1 VIH1 High-level input 2.0 VCC + 1 V VCC 2.7V (Note 1) voltage D2 VIH2 0.7 VCC VCC + 1 V VCC < 2.7V (Note 1) D3 VIL1 Low-level input -0.3 0.8 V VCC 2.7V (Note 1) voltage D4 VIL2 -0.3 0.2 VCC VVCC < 2.7V (Note 1) D5 VOL Low-level output 0.4 VIOL = 2.1 mA voltage 0.2 VIOL = 1.0 mA, VCC = < 2.5V D6 VOH High-level output VCC - 0.5 V IOH = -400 A voltage D7 ILI Input leakage current 1 ACS = VCC, VIN = VSS TO VCC D8 ILO Output leakage 1 ACS = VCC, VOUT = VSS TO VCC current D9 CINT Internal Capacitance A = 25C, CLK = 1.0 MHz, 7 pFT (all inputs and VCC = 5.0V (Note 1) outputs) D10 ICC Read Operating Current 1 mA VCC = 5.5V FCLK = 3.0 MHz 500 A SO = Open VCC = 2.5V FCLK = 2.0 MHz SO = Open D11 ICC Write 5 mA VCC = 5.5V 3 mA VCC = 2.5V D12 ICCS Standby Current 5 A CS = VCC = 5.5V, Inputs tied to VCC or 1 A VSS CS = VCC = 2.5V, Inputs tied to VCC or VSS Note 1: This parameter is periodically sampled and not 100% tested. DS21223G-page 2 2004 Microchip Technology Inc.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
AT9
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Microsemi Analog Mixed Signal Group
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