2N3506 thru 2N3507A Qualified Levels: NPN MEDIUM POWER SILICON JAN, JANTX and Available on TRANSISTOR JANTXV commercial versions Qualified per MIL-PRF-19500/349 DESCRIPTION This family of 2N3506 through 2N3507A high-frequency, epitaxial planar transistors feature low saturation voltage. These devices are also available in TO-5 and low profile U4 packaging. Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages. Important: For the latest information, visit our website 2N3506 thru 2N3507A MECHANICAL and PACKAGING CASE: Hermetically sealed, kovar base, nickel cap. TERMINALS: Leads are kovar, nickel plated, and finish is solder dip (Sn63/Pb37). Can be RoHS compliant (commercial grade only) with pure matte-tin (commercial grade only). MARKING: Part number, date code, manufacturers ID. POLARITY: NPN (see package outline). WEIGHT: Approximately 1.064 grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 2N3506 A (e3) Reliability Level RoHS Compliance JAN = JAN Level e3 = RoHS compliant (available JANTX = JANTX Level on commercial grade only) JANTXV = JANTXV Level Blank = non-RoHS compliant Blank = Commercial Level improvement JEDEC type number A = 2V gain specification (see Electrical Characteristics -55C table) Blank = 1V gain specification -55C SYMBOLS & DEFINITIONS Symbol Definition C Common-base open-circuit output capacitance. obo I Collector cutoff current, base open. CEO I Collector cutoff current, circuit between base and emitter. CEX I Emitter cutoff current, collector open. EBO h Common-emitter static forward current transfer ratio. FE V Collector-emitter voltage, base open. CEO V Collector-emitter voltage, emitter open. CBO V Emitter-base voltage, collector open. EBO T4-LDS-0016, Rev. 2 (111682) 2011 Microsemi Corporation Page 2 of 6