2N7002 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description Free from secondary breakdown The Supertex 2N7002 is an enhancement-mode (normally- off) transistor that utilizes a vertical DMOS structure Low power drive requirement and Supertexs well-proven silicon-gate manufacturing Ease of paralleling process. This combination produces a device with the Low C and fast switching speeds ISS power handling capabilities of bipolar transistors, and the Excellent thermal stability high input impedance and positive temperature coefcient Integral source-drain diode inherent in MOS devices. Characteristic of all MOS High input impedance and high gain structures, this device is free from thermal runaway and Complementary N- and P-Channel devices thermally-induced secondary breakdown. Applications Supertexs vertical DMOS FETs are ideally suited to a Motor controls wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high Converters input impedance, low input capacitance, and fast switching Ampliers speeds are desired. Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Ordering Information R I DS(ON) D(ON) BV /BV DSS DGS Device Package Option (max) (min) (V) () (A) 2N7002-G TO-236AB (SOT-23) 60 7.5 0.5 -G indicates package is RoHS compliant (Green) Absolute Maximum Ratings Pin Conguration Parameter Value DRAIN Drain-to-source voltage BV DSS Drain-to-gate voltage BV DGS SOURC E Gate-to-source voltage 30V Operating and storage temperature -55C to +150C GATE TO-236AB (SOT-23) Soldering temperature* +300C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous Product Marking operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. W = Code for week sealed 7 0 2 W = Green Packaging * Distance of 1.6mm from case for 10 seconds. TO-236AB (SOT-23) 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com2N7002 Thermal Characteristics I I Power Dissipation D D I I O jc ja DR DRM Package T = 25 C (continuous) (pulsed) A O O ( C/W) ( C/W) (mA) (mA) (W) (mA) (mA) TO-236AB 115 800 0.36 200 350 115 800 Notes: I (continuous) is limited by max rated T. D j Electrical Characteristics (T = 25C unless otherwise specied) A Sym Parameter Min Typ Max Units Conditions BV Drain-to-source breakdown voltage 60 - - V V = 0V, I = 10A DSS GS D V Gate threshold voltage 1.0 - 2.5 V V = V , I = 250A GS(th) GS DS D O V Change in V with temperature - - -5.5 mV/ C V = V , I = 250A GS(th) GS(th) GS DS D I Gate body leakage current - - 100 nA V = 20V, V = 0V GSS GS DS - - 1.0 V = 0V, V = Max rating GS DS I Zero gate voltage drain current A DSS V = 0V, V = 0.8Max rating, GS DS - - 500 O T = 125 C A I On-state drain current 500 - - mA V = 10V, V = 25V D(ON) GS DS - - 7.5 V = 5.0V, I = 50mA Static drain-to-source GS D R DS(ON) on-state resistance - - 7.5 V = 10V, I = 500mA GS D O R Change in R with temperature - - 1.0 %/ C V = 10V, I = 500mA DS(ON) DS(ON) GS D G Forward transconductance 80 - - mmho V = 25V, I = 500mA FS DS D C Input capacitance - - 50 ISS V = 0V, GS C Common source output capacitance - - 25 pF V = 25V, OSS DS f = 1.0MHz C Reverse transfer capacitance - - 5.0 RSS t Turn-on time - - 20 (ON) V = 30V, I = 200mA, DD D ns R = 25 t Turn-off time - - 20 GEN (OFF) V Diode forward voltage drop - 1.2 - V V = 0V, I = 200mA SD GS SD t Reverse recovery time - 400 - ns V = 0V, I = 800mA rr GS SD Notes: O 1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit V DD 10V 90% R L INPUT PULSE GENERATOR 10% 0V OUTPUT t t (ON) (OFF) R GEN t t t t d(ON) r d(OFF) F V DD D.U.T. 10% 10% INPUT OUTPUT 0V 90% 90% 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2