2N7002TQ-7-F Diodes Incorporated

2N7002TQ-7-F electronic component of Diodes Incorporated
2N7002TQ-7-F Diodes Incorporated
2N7002TQ-7-F MOSFETs
2N7002TQ-7-F  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of 2N7002TQ-7-F MOSFETs across the USA, India, Europe, Australia, and various other global locations. 2N7002TQ-7-F MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. 2N7002TQ-7-F
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: 60V 115mA 7.5O@5V,50mA 150mW N Channel SOT-523-3 MOSFETs ROHS
Datasheet: 2N7002TQ-7-F Datasheet (PDF)
Price (USD)
12000: USD 0.0239 ea
Line Total: USD 286.8 
Availability : 66930
  
Ship by Fri. 08 Aug to Thu. 14 Aug
QtyUnit Price
12000$ 0.0239

Availability 66930
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 12000
Multiples : 3000
QtyUnit Price
12000$ 0.0239


Availability 8585
Ship by Wed. 06 Aug to Fri. 08 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.35
10$ 0.1875
100$ 0.0972
500$ 0.0825
1000$ 0.0814
3000$ 0.066
6000$ 0.0627


Availability 221160
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 6000
Multiples : 3000
QtyUnit Price
6000$ 0.0682


Availability 66930
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 12000
Multiples : 3000
QtyUnit Price
12000$ 0.0239

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2N7002TQ-7-F from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N7002TQ-7-F and other electronic components in the MOSFETs category and beyond.

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1. The 2N7002TQ-7-F is an N-channel enhancement-mode field-effect transistor (FET) manufactured by Diodes Incorporated. 2. It has a low on-state resistance and extremely fast switching speed, making it suitable for use in high-speed switching circuits. It has a maximum drain current of 175mA, peak drain-source voltage of 60V, maximum gate-source voltage of +/-20V, and maximum continuous drain current of 350mA. It has a maximum storage temperature of 150 degrees Celsius and a maximum junction temperature of 175 degrees Celsius. The lead-free package has matte tin finish.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Diodes
DIODES INC
DIODES INC / ZETEX
DIODES INC.
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DiodesZetex
PAM(Diodes Inc)
PER
Pericom
PERICOM SEMI
Pericom Semiconductor
Pericom Technology
Pericom/Diodes
ZTX
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