Product Information

APT100DL60HJ

APT100DL60HJ electronic component of Microchip

Datasheet
Discrete Semiconductor Modules DOR CC0003

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 30.4175 ea
Line Total: USD 30.42

10 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

APT100DL60HJ
Microchip

1 : USD 31.3831
100 : USD 28.1202

     
Manufacturer
Product Category
Technology
Category
Case
Mechanical Mounting
Version
Electrical Mounting
Kind Of Package
Leads
Type Of Semiconductor Component
Max. Forward Voltage
Max. Off-State Voltage
Load Current
LoadingGif

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APT100DL60HJ ISOTOP Fast Diode V = 600V RRM I = 100A Tc = 80C Full Bridge Power Module F Application Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features Ultra fast recovery times Soft recovery characteristics High blocking voltage High current Low leakage current Very low stray inductance High level of integration ISOTOP Package (SOT-227) + ~ Benefits Outstanding performance at high frequency operation ~ - Low losses Low noise switching Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant Absolute maximum ratings Symbol Parameter Max ratings Unit V Maximum DC reverse Voltage R 600 V V Maximum Peak Repetitive Reverse Voltage RRM Maximum Average Forward I Duty cycle = 50% T = 80C 100 F(AV) C Current A Maximum repetitive forward current limited I 8.3ms T = 45C 200 FRM J by T Jmax These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com 1-4 www.microsemi.com APT100DL60HJ Rev 1 October, 2012 APT100DL60HJ All ratings T = 25C unless otherwise specified j Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit T = 25C 1.6 2 j V Diode Forward Voltage I = 100A V F F T = 150C 1.5 j T = 25C 250 j I Maximum Reverse Leakage Current V = 600V A RM R T = 150C 500 j Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit T = 25C 125 j t Reverse Recovery Time ns rr T = 150C 180 j I = 100A F T = 25C 4.7 j V = 300V Q Reverse Recovery Charge C rr R T = 150C 9.9 j di/dt = 2000A/s T = 25C 1.1 j E Reverse Recovery Energy mJ rr T = 150C 2.4 j Thermal and package characteristics Symbol Characteristic Min Typ Max Unit R Junction to Case Thermal resistance 0.77 thJC C/W R Junction to Ambient 20 thJA RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz V 2500 V ISOL T ,T Storage Temperature Range -55 175 J STG C T Max Lead Temp for Soldering:0.063 from case for 10 sec 300 L Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) 1.5 N.m g Wt Package Weight 29.2 SOT-227 (ISOTOP ) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 8.9 (.350) 9.6 (.378) W=4.1 (.161) 7.8 (.307) W=4.3 (.169) 8.2 (.322) Hex Nut M4 H=4.8 (.187) (4 places) H=4.9 (.193) (4 places) 25.2 (0.992) 25.4 (1.000) r = 4.0 (.157) 4.0 (.157) 0.75 (.030) 3.30 (.130) 12.6 (.496) (2 places) 4.2 (.165) 0.85 (.033) 4.57 (.180) 12.8 (.504) (2 places) 3.3 (.129) 1.95 (.077) 3.6 (.143) 2.14 (.084) 14.9 (.587) 15.1 (.594) 30.1 (1.185) Dimensions in Millimeters and (Inches) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 2-4 www.microsemi.com APT100DL60HJ Rev 1 October, 2012

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
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