APT100GT60JRDQ4 600V, 100A, V = 2.1V Typical CE(ON) Thunderbolt IGBT The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT offers superior rugged- ness and ultrafast switching speed. Features RBSOA and SCSOA Rated Low Forward Voltage Drop UL Recognize High Frequency Switching to 50KHz file E145592 Low Tail Current IS OT OP Ultra Low Leakage Current Integrated Gate Resistor Low EMI, High Reliability RoHS Compliant Maximum Ratings All Ratings: T = 25C unless otherwise speci ed. C Parameter Symbol Ratings Unit Collector-Emitter Voltage 600 V CES Volts V Gate-Emitter Voltage 30 GE I Continuous Collector Current T = 25C 148 C1 C I Continuous Collector Current T = 100C 80 Amps C2 C 1 I Pulsed Collector Current 300 CM SSOA Switching Safe Operating Area T = 150C 300A 600V J Total Power Dissipation 500 Watts P D Operating and Storage Junction Temperature Range -55 to 150 C T , T J STG Static Electrical Characteristics Characteristic / Test Conditions Unit Symbol Min Typ Max V Collector-Emitter Breakdown Voltage (V = 0V, I = 4mA) 600 - - (BR)CES GE C V Gate Threshold Voltage (V = V , I = 1.5mA, T = 25C) 345 GE(TH) CE GE C j Volts Collector Emitter On Voltage (V = 15V, I = 100A, T = 25C) 1.7 2.1 2.5 GE C j V CE(ON) Collector Emitter On Voltage (V = 15V, I = 100A, T = 125C) - 2.5 - GE C j 2 -- 50 Collector Cut-off Current (V = 600V, V = 0V, T = 25C) CE GE j A I CES 2 - - 1500 Collector Cut-off Current (V = 600V, V = 0V, T = 125C) CE GE j I Gate-Emitter Leakage Current (V = 30V) - - 300 nA GES GE CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - Dynamic Characteristic APT100GT60JRDQ4 Symbol Characteristic Test Conditions Min Typ Max Unit C Input Capacitance - 5150 - ies V = 0V, V = 25V GE CE C Output Capacitance - 475 - pF oes f = 1MHz C Reverse Transfer Capacitance - 295 - res V Gate-to-Emitter Plateau Voltage - 8.0 - V GEP Gate Charge 3 Q Total Gate Charge - 460 - V = 15V g GE V = 300V Q Gate-Emitter Charge - 40 - nC ge CE I = 100A Q C Gate-Collector Charge - 210 - gc T = 150C, R = 4.3 , V = 15V, J G GE SSOA Switching Safe Operating Area 300 A L = 100 H, V = 600V CE t Turn-On Delay Time -40 - d(on) t Inductive Switching (25C) Current Rise Time - 75 - r ns V = 400V t CC Turn-Off Delay Time - 320 - d(off) V = 15V GE t Current Fall Time - 100 - f I = 100A C 4 E Turn-On Switching Energy - 3250 - on1 R = 4.3 G 5 E Turn-On Switching Energy - 3525 - J T = +25C on2 J 6 E Turn-Off Switching Energy - 3125 - off t Turn-On Delay Time -40 - d(on) t Current Rise Time - 75 - r Inductive Switching (125C) ns t Turn-Off Delay Time - 350 - V = 400V d(off) CC t V = 15V Current Fall Time - 100 - GE f I = 100A 4 E C Turn-On Switching Energy - 3275 - on1 R = 4.3 G 5 E Turn-On Switching Energy - 4650 - J on2 T = +125C J 6 E Turn-Off Switching Energy - 3750 - off Thermal and Mechanical Characteristics Characteristic / Test Conditions Min Typ Max Unit Symbol - - 0.25 R Junction to Case (IGBT) JC C/W - - 0.33 R Junction to Case (DIODE) JC Package Weight W - 29.2 - g T - - 10 inlbf Torque Terminals and Mounting Screws - - 1.1 Nm V RMS Voltage (50-60Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.) 2500 - - Volts Isolation 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, I includes both IGBT and FRED leakages. ces 3 See MIL-STD-750 Method 3471. 4 E is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to on1 z a the IGBT turn-on loss. Tested in inductive switching test circuit shown in gure 21, but with a Silicon Carbide diode. 5 E is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching on2 loss. (See Figures 21, 22.) 6 E is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) off 7 R is external gate resistance not including gate driver impedance. G Microsemi reserves the right to change, without notice, the speci cations and information contained herein. 052-6294 Rev C 3 - 2012