APT10M11JVRU3 Microchip

APT10M11JVRU3 V = 100V DSS ISOTOP Buck chopper R = 11m max Tj = 25C DSon MOSFET Power Module I = 142A Tc = 25C D D Application AC and DC motor control Switched Mode Power Supplies Features G Power MOS V MOSFETs - Low R DSon S - Low input and Miller capacitance - Low gate charge - Fast intrinsic diode - Avalanche energy rated - Very rugged ISOTOP Package (SOT-227) A Very low stray inductance High level of integration A Benefits S Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance D G Very rugged Low profile RoHS Compliant ISOTOP Absolute maximum ratings Symbol Parameter Max ratings Unit V Drain - Source Breakdown Voltage 100 V DSS T = 25C 142 c I Continuous Drain Current D T = 80C 106 A c I Pulsed Drain current 576 DM V Gate - Source Voltage 30 V GS R Drain - Source ON Resistance 11 m DSon P Maximum Power Dissipation T = 25C 450 W D c I Avalanche current (repetitive and non repetitive) 144 A AR E Repetitive Avalanche Energy 50 AR mJ E Single Pulse Avalanche Energy 2500 AS IF Maximum Average Forward Current Duty cycle=0.5 Tc = 90C 30 AV A IF RMS Forward Current (Square wave, 50% duty) 47 RMS These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. 1 8 www.microsemi.com APT10M11JVRU3 Rev 2 October, 2012 APT10M11JVRU3 All ratings T = 25C unless otherwise specified j Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit V = 0V,V = 100V T = 25C 250 GS DS j I Zero Gate Voltage Drain Current A DSS V = 0V,V = 80V T = 125C 1000 GS DS j R Drain Source on Resistance V = 10V, I = 71A 11 m DS(on) GS D V Gate Threshold Voltage V = V , I = 2.5mA 2 4 V GS(th) GS DS D I Gate Source Leakage Current V = 20 V, V = 0V 100 nA GSS GS DS Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit C Input Capacitance V = 0V 8600 iss GS V = 25V pF C Output Capacitance 3200 DS oss f = 1MHz C Reverse Transfer Capacitance 1180 rss Q Total gate Charge 300 g V = 10V GS V = 50V nC Q Gate Source Charge 95 gs Bus I = 50A T =25C D J Q Gate Drain Charge 110 gd T Turn-on Delay Time 16 d(on) V = 15V GS T Rise Time 48 r V = 50V Bus ns I = 142A T =25C D J T Turn-off Delay Time 51 d(off) R = 0.6 G T Fall Time 9 f Chopper diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit I = 30A 1.1 1.15 F V Diode Forward Voltage V F I = 60A 1.4 F I = 30A T = 125C 0.9 F j V = 200V T = 25C 250 R j I Maximum Reverse Leakage Current A RM V = 200V T = 125C 500 R j C Junction Capacitance V = 200V 94 pF T R I =1A,V =30V F R Reverse Recovery Time T = 25C 21 j di/dt =200A/s t ns rr T = 25C 24 j Reverse Recovery Time T = 125C 48 j I = 30A F T = 25C 3 j I Maximum Reverse Recovery Current A RRM V = 133V R T = 125C 6 j di/dt =200A/s T = 25C 33 j Q Reverse Recovery Charge nC rr T = 125C 150 j t Reverse Recovery Time 31 ns I = 30A rr F V = 133V T = 125C Q Reverse Recovery Charge R j 335 nC rr di/dt =1000A/s I Maximum Reverse Recovery Current 19 A RRM 2 8 www.microsemi.com APT10M11JVRU3 Rev 2 October, 2012