TO-247 TYPICAL PERFORMANCE CURVES APT15GP90B(G) 900V APT15GP90B APT15GP90BG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E Low Conduction Loss SSOA Rated Low Gate Charge C Ultrafast Tail Current shutoff G E MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specied. C Parameter Symbol APT15GP90B(G) UNIT V Collector-Emitter Voltage 900 CES Volts V Gate-Emitter Voltage 30 GE I Continuous Collector Current T = 25C 43 C1 C I Continuous Collector Current T = 110C 21 Amps C2 C 1 Pulsed Collector Current I 60 CM Switching Safe Operating Area T = 150C 60A 900V SSOA J P Total Power Dissipation 250 Watts D T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Max. Lead Temp. for Soldering: 0.063 from Case for 10 Sec. 300 L STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX Units V Collector-Emitter Breakdown Voltage (V = 0V, I = 350A) 900 (BR)CES GE C V Gate Threshold Voltage (V = V , I = 1mA, T = 25C) 3 4.5 6 GE(TH) CE GE C j Volts Collector-Emitter On Voltage (V = 15V, I = 15A, T = 25C) 3.2 3.9 GE C j V CE(ON) Collector-Emitter On Voltage (V = 15V, I = 15A, T = 125C) 2.7 GE C j 2 Collector Cut-off Current (V = 900V, V = 0V, T = 25C) 250 CE GE j I A CES 2 Collector Cut-off Current (V = 900V, V = 0V, T = 125C) 2500 CE GE j Gate-Emitter Leakage Current (V = 20V) I 100 nA GE GES CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - APT15GP90B(G) DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions MIN TYP MAX UNIT C 1100 Input Capacitance Capacitance ies C pF 120 Output Capacitance V = 0V, V = 25V oes GE CE C f = 1 MHz 32 Reverse Transfer Capacitance res V V Gate-to-Emitter Plateau Voltage Gate Charge 7.5 GEP 3 Q V = 15V Total Gate Charge 60 g GE V = 450V Q nC Gate-Emitter Charge 10 CE ge I = 15A Q C 27 Gate-Collector Mille) Charge gc T = 150C, R = 4.3, V = J G GE Switching Safe Operating Area SSOA A 60 15V, L = 100H,V = 900V CE t Inductive Switching (25C) Turn-on Delay Time d(on) 9 V = 600V t Current Rise Time 14 CC r ns t V = 15V Turn-off Delay Time d(off) GE 33 I = 15A t C Current Fall Time 55 f R = 4.3 4 G E Turn-on Switching Energy TBD on1 T = +25C 5 J E J Turn-on Switching Energy (Diode) 430 on2 6 E Turn-off Switching Energy 200 off t Inductive Switching (125C) Turn-on Delay Time d(on) 9 t V = 600V Current Rise Time 14 r CC ns V = 15V t Turn-off Delay Time GE d(off) 70 I = 15A t C Current Fall Time f 100 R = 4.3 4 4 G E Turn-on Switching Energy TBD on1 T = +125C 55 J E J Turn-on Switching Energy (Diode) 790 on2 6 E Turn-off Switching Energy 500 off THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic UNIT MIN TYP MAX R Junction to Case (IGBT) .50 JC C/W R Junction to Case (DIODE) N/A JC W Package Weight gm 5.9 T 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, I includes both IGBT and FRED leakages ces 3 See MIL-STD-750 Method 3471. 4 E is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current on1 adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in gure 21, but with a Silicon Carbide diode. 5 E is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching on2 loss. (See Figures 21, 22.) 6 E is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) off APT Reserves the right to change, without notice, the specications and information contained herein. 050-7470 Rev D 2-2006