T O-247 APT25GR120B SSCD10 APT25GR120BSCD10 APT25GR120SSCD10 1200V, 25A, V = 2.5V Typical CE(on) Ultra Fast NPT - IGBT (B) The Ultra Fast NPT - IGBT is a new generation of high voltage power IGBTs. 3 D PA K Using Non-Punch-Through Technology, the Ultra Fast NPT-IGBT offers superior ruggedness and ultrafast switching speed. (S) C G E Features G C Low Saturation Voltage Short Circuit Withstand Rated E Low Tail Current High Frequency Switching RoHS Compliant Ultra Low Leakage Current Combi (IGBT and Diode) Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is recommended for applications such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS). MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter Ratings Unit V Collector Emitter Voltage 1200 ces V V Gate-Emitter Voltage 30 GE I Continuous Collector Current T = 25C 75 C1 C I Continuous Collector Current T = 125C 25 A C2 C 1 I Pulsed Collector Current 100 CM SCWT Short Circuit Withstand Time: V = 600V, V = 15V, T =125C 10 s CE GE C P Total Power Dissipation T = 25C 521 W D C T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Max. Lead Temp. for Soldering: 0.063 from Case for 10 Sec. 300 L STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter Min Typ Max Unit V Collector-Emitter Breakdown Voltage (V = 0V, I = 500A) 1200 (BR)CES GE C V Gate Threshold Voltage (V = V , I = 1.0mA, T = 25C) 3.5 5.0 6.5 GE(TH) CE GE C j Volts Collector-Emitter On Voltage (V = 15V, I = 25A, T = 25C) 2.5 3.2 GE C j V CE(ON) Collector-Emitter On Voltage (V = 15V, I = 25A, T = 125C) 3.3 GE C j Collector-Emitter On Voltage (V = 15V, I = 50A, T = 25C) 3.5 GE C j 2 Collector Cut-off Current (V = 1200V, V = 0V, T = 25C) 25 700 CE GE j I A CES 2 Collector Cut-off Current (V = 1200V, V = 0V, T = 125C) 250 CE GE j I Gate-Emitter Leakage Current (V = 20V) 250 nA GES GE CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - DYNAMIC CHARACTERISTICS APT25GR120B SSCD10 Symbol Parameter Test Conditions Min Typ Max Unit C Input Capacitance Capacitance 2484 ies C Output Capacitance V = 0V, V = 25V 271 pF oes GE CE C Reverse Transfer Capacitance f = 1MHz 75 res V Gate to Emitter Plateau Voltage 7.5 V GEP Gate Charge 3 Q Total Gate Charge 154 203 g V = 15V GE Q Gate-Emitter Charge 20 27 ge V = 600V nC CE 76 97 Q Gate- Collector Charge I = 25A gc C t Turn-On Delay Time Inductive Switching (25C) 16 d(on) t Current Rise Time V = 600V 10 r CC ns t Turn-Off Delay Time V = 15V 122 d(off) GE t Current Fall Time I = 25A 20 f C 5 4 E Turn-On Switching Energy R = 4.3 434 650 on2 G J 6 E Turn-Off Switching Energy T = +25C 466 700 off J t Turn-On Delay Time Inductive Switching (125C) 16 d(on) t Current Rise Time V = 600V 10 r CC ns t Turn-Off Delay Time V = 15V 136 d(off) GE t Current Fall Time I = 25A 28 f C 5 4 E Turn-On Switching Energy R = 4.3 506 760 on2 G J 6 480 720 E Turn-Off Switching Energy T = +125C off J THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic Min Typ Max Unit Junction to Case Thermal Resistance (IGBT) .24 R JC Junction to Case Thermal Resistance (Diode) 1.00 C/W R Junction to Ambient Thermal Resistance 40 JA .22 oz W Package Weight T 6.2 g 10 inlbf Torque Terminals and Mounting Screws. 1.1 Nm 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 380s, duty cycle < 2%. 3 See Mil-Std-750 Method 3471. 4 R is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) G 5 E is the energy loss at turn-on and includes the charge stored in the freewheeling diode. on2 6 E is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. off Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.25 D = 0.9 0.20 0.7 0.15 0.5 Note: 0.10 t 0.3 1 t 2 0.05 0.1 t 1 t Duty Factor D = / 2 Peak T = P x Z + T J DM JC C SINGLE PULSE 0.05 0 -5 -4 -3 -2 10 10 10 10 0.1 1 RECTANGULAR PULSE DURATION (SECONDS) Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 052-6410 Rev A 1-2013 Z , THERMAL IMPEDANCE (C/W) JC P DM