APT2X100D40J Microchip

APT2X100D40J electronic component of Microchip
APT2X100D40J Microchip
APT2X100D40J Discrete Semiconductor Modules
APT2X100D40J  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of APT2X100D40J Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. APT2X100D40J Discrete Semiconductor Modules are a product manufactured by Microchip. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

Part No. APT2X100D40J
Manufacturer: Microchip
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules Fast Recovery Epitaxial Diode - D
Datasheet: APT2X100D40J Datasheet (PDF)
Price (USD)
1: USD 32.0394 ea
Line Total: USD 32.04 
Availability : 0
  
QtyUnit Price
1$ 32.0394
10$ 27.682

Availability 0
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 33.4125
10$ 28.8684


Availability 0
Ship by Wed. 12 Nov to Fri. 14 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 37.147
100$ 34.298


Availability 0
Ship by Wed. 12 Nov to Fri. 14 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 42.2953


Availability 0
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 32.0394
10$ 27.682

   
Manufacturer
Product Category
Technology
Case
Semiconductor Structure
Mounting
Electrical Mounting
Type Of Module
Max. Off-State Voltage
Load Current
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the APT2X100D40J from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the APT2X100D40J and other electronic components in the Discrete Semiconductor Modules category and beyond.

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23 2 3 2 3 1 4 14 1 4 Anti-Paralle l P aralle l APT2X101D40J 400V 100A APT2X100D40J APT2X101D40JUL Recognize APT2X100D40J 400V 100A file E145592 IS OT OP DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS Anti-Parallel Diode Ultrafast Recovery Times Low Losses -Switchmode Power Supply Soft Recovery Characteristics Low Noise Switching -Inverters Free Wheeling Diode Popular SOT-227 Package Cooler Operation -Motor Controllers -Converters Low Forward Voltage Higher Reliability Systems Snubber Diode Uninterruptible Power Supply (UPS) High Blocking Voltage Increased System Power Induction Heating Density Low Leakage Current High Speed Recti ers MAXIMUM RATINGS All Ratings: T = 25C unless otherwise speci ed. C Characteristic / Test Conditions APT2X101 100D40J Symbol UNIT V Maximum D.C. Reverse Voltage R V Maximum Peak Repetitive Reverse Voltage 400 Volts RRM V Maximum Working Peak Reverse Voltage RWM I (AV) 100 Maximum Average Forward Current (T = 112C, Duty Cycle = 0.5) F C I (RMS) RMS Forward Current (Square wave, 50% duty) 164 Amps F I 1000 Non-Repetitive Forward Surge Current (T = 45C, 8.3ms) FSM J T ,T Operating and StorageTemperature Range -55 to 175 C J STG STATIC ELECTRICAL CHARACTERISTICS Symbol MIN TYP MAX UNIT I = 100A 1.3 1.5 F Forward Voltage I = 200A V Volts 1.6 F F I = 100A, T = 125C 1.2 F J V = V Rated 500 R R I Maximum Reverse Leakage Current A RM V = V Rated, T = 125C 1000 R R J C 260 pF Junction Capacitance, V = 200V T R Microsemi Website - APT2X101 100D40J DYNAMIC CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT Test Conditions Reverse Recovery Time t I = 1A, di /dt = -100A/s, V = 30V, T = 25C rr - 37 F F R J ns t Reverse Recovery Time - 50 rr I = 100A, di /dt = -200A/s F F Q Reverse Recovery Charge nC rr - 150 V = 268V, T = 25C R C I Maximum Reverse Recovery Current Amps - 6 7 RRM t Reverse Recovery Time ns rr - 150 I = 100A, di /dt = -200A/s F F Q Reverse Recovery Charge nC rr - 1050 V = 268V, T = 125C R C I Maximum Reverse Recovery Current Amps RRM - 13 17 t Reverse Recovery Time ns rr - 90 I = 100A, di /dt = -800A/s F F Q Reverse Recovery Charge nC - 2100 rr V = 268V, T = 125C R C I Maximum Reverse Recovery Current Amps - 39 RRM THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT R Junction-to-Case Thermal Resistance .42 JC C/W R Junction-to-Ambient Thermal Resistance 20 JA 1.03 oz W Package Weight T 29.2 g 10 lbin Torque Maximum Terminal & Mounting Torque 1.1 Nm Microsemi Reserves the right to change, without notice, the speci cations and information contained herein. 0.45 0.9 0.40 0.35 0.7 0.30 0.25 0.5 Note: 0.20 t 1 0.3 0.15 t 2 0.10 t 1 t Duty Factor D = / 0.1 2 0.05 Peak T = P x Z + T J DM JC C SINGLE PULSE 0.05 0 -5 -4 -3 -2 10 10 10 10 0.1 1 RECTANGULAR PULSE DURATION (seconds) FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 053-4007 Rev G 3-2011 Z , THERMAL IMPEDANCE (C/W) JC P DM

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