APT35GT120JU2 Microchip

APT35GT120JU2 ISOTOP Boost chopper V = 1200V CES Trench + Field Stop IGBT3 I = 35A Tc = 80C C K Application AC and DC motor control Switched Mode Power Supplies Power Factor Correction C Brake switch Features G Trench + Field Stop IGBT3 Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF E - Low leakage current - RBSOA and SCSOA rated ISOTOP Package (SOT-227) Very low stray inductance High level of integration K E Benefits Low conduction losses Stable temperature behavior C G Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive T of V C CEsat RoHS Compliant ISOTOP Absolute maximum ratings Symbol Parameter Max ratings Unit V Collector - Emitter Breakdown Voltage 1200 V CES = 25C I T 55 C1 C Continuous Collector Current A I T = 80C 35 C2 C I Pulsed Collector Current T = 25C 80 CM C V Gate Emitter Voltage 20 V GE P Maximum Power Dissipation T = 25C 260 W D C IF Maximum Average Forward Current Duty cycle=0.5 T = 80C 27 AV C A IF RMS Forward Current (Square wave, 50% duty) 34 RMS These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. 1-8 www.microsemi.com APT35GT120JU2 Rev 2 October 2012 APT35GT120JU2 All ratings T = 25C unless otherwise specified j Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit I Zero Gate Voltage Collector Current V = 0V, V = 1200V 5 mA CES GE CE T = 25C V =15V j 1.4 1.7 2.1 GE V Collector Emitter saturation Voltage V CE(sat) I = 35A T = 125C C 2.0 j V Gate Threshold Voltage V = V , I = 3mA 5.0 6.5 V GE(th) GE CE C I Gate Emitter Leakage Current V = 20V, V = 0V 500 nA GES GE CE Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit C Input Capacitance V = 0V 2530 ies GE V = 25V C Output Capacitance CE 132 pF oes f = 1MHz C Reverse Transfer Capacitance 115 res T Turn-on Delay Time Resistive Switching (25C) 85 d(on) V = 15V GE T Rise Time 30 r V = 600V ns Bus T Turn-off Delay Time 420 d(off) I = 35A C T Fall Time R = 27 62 f G Inductive Switching (125C) T Turn-on Delay Time 90 d(on) V = 15V GE T Rise Time 45 r ns V = 600V Bus T Turn-off Delay Time 520 d(off) I = 35A C T Fall Time 90 f R = 27 G E Turn-on Switching Energy 5.8 on mJ E Turn-off Switching Energy 4.6 off 2-8 www.microsemi.com APT35GT120JU2 Rev 2 October 2012