A1P35S12M3-F Datasheet ACEPACK 1 sixpack topology, 1200 V, 35 A, trench gate field stop M series IGBT with soft diode and NTC Features ACEPACK 1 power module DBC Cu Al O Cu 2 3 Sixpack topology 1200 V, 35 A IGBTs and diodes Soft and fast recovery diode Integrated NTC Applications ACEPACK 1 Inverters Industrial Motor drives Description This power module is a sixpack topology in an ACEPACK 1 package with NTC, integrating the advanced trench gate field-stop technologies from STMicroelectronics. This new IGBT technology represents the best compromise between conduction and switching loss, to maximize the efficiency of any converter system up to 20 kHz. Product status A1P35S12M3-F Product summary Order code A1P35S12M3-F Marking A1P35S12M3-F V , I ratings 1200 V, 35 A CES C Package ACEPACK 1 Packing Press fit contact pins DS11636 - Rev 5 - November 2018 www.st.com For further information contact your local STMicroelectronics sales office.A1P35S12M3-F Electrical ratings 1 Electrical ratings 1.1 IGBT Limiting values at T = 25 C, unless otherwise specified. J Table 1. Absolute maximum ratings of the IGBT Symbol Parameter Value Unit V Collector-emitter voltage (V = 0 V) 1200 V CES GE I Continuous collector current (T = 100 C) 35 A C C (1) I Pulsed collector current (t = 1 ms) 70 A p CP V Gate-emitter voltage 20 V GE P Total power dissipation of each IGBT (T = 25 C, T = 175 C) 250 W TOT C J T Maximum junction temperature 175 C JMAX T Operating junction temperature range under switching conditions -40 to 150 C Jop 1. Pulse width limited by maximum junction temperature. Table 2. Electrical characteristics of the IGBT Symbol Parameter Test conditions Min. Typ. Max. Unit Collector-emitter breakdown V I = 1 mA, V = 0 V 1200 V (BR)CES C GE voltage V = 15 V, I = 35 A 1.95 2.45 GE C V CE(sat) Collector-emitter saturation V = 15 V, I = 35 A, V GE C voltage (terminal) 2.3 T = 150 C J V V = V , I = 1 mA Gate threshold voltage 5 6 7 V GE(th) CE GE C I Collector cut-off current V = 0 V, V = 1200 V 100 A CES GE CE I Gate-emitter leakage current V = 0 V, V = 20 V 500 nA GES CE GE C Input capacitance 2154 pF ies V = 25 V, f = 1 MHz, CE C Output capacitance 164 pF oes V = 0 V GE C Reverse transfer capacitance 86 pF res V = 960 V, I = 35 A, CC C Q Total gate charge 163 nC g V = 15 V GE t Turn-on delay time 122 ns d(on) V = 600 V, I = 35 A, CC C t Current rise time R = 10 , V = 15 V, 17 ns r G GE (1) di/dt = 1900 A/s E Turn-on switching energy 1.21 mJ on t Turn-off delay time 142 ns d(off) V = 600 V, I = 35 A, CC C t Current fall time 150 ns f R = 10 , V = 15 V, G GE (2) dv/dt = 7800 V/s E Turn-off switching energy 2.19 mJ off DS11636 - Rev 5 page 2/16