Product Information

APT40GL120JU2

APT40GL120JU2 electronic component of Microchip

Datasheet
IGBT Modules Power Module - IGBT
Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 27.1975 ea
Line Total: USD 27.2

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1

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APT40GL120JU2
Microchip

1 : USD 27.1975
100 : USD 24.38

0 - WHS 2


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

APT40GL120JU2
Microchip

1 : USD 30.4358
2 : USD 28.7804
3 : USD 28.7667

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Maximum Operating Temperature
Minimum Operating Temperature
Packaging
Pd - Power Dissipation
Package / Case
Brand
Mounting Style
Maximum Gate Emitter Voltage
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
LoadingGif

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Additional Infomation About Product

APT40GL120JU2 ISOTOP Boost chopper V = 1200V CES Trench + Field Stop IGBT4 I = 40A Tc = 80C C Power module Application AC and DC motor control K Switched Mode Power Supplies Power Factor Correction Brake switch C Features Trench + Field Stop IGBT 4 Technology - Low voltage drop G - Low leakage current - Low switching losses - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated E ISOTOP Package (SOT-227) Very low stray inductance High level of integration K E Benefits Low conduction losses C Stable temperature behavior G Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive T of V C CEsat RoHS Compliant ISOTOP Absolute maximum ratings Symbol Parameter Max ratings Unit V Collector - Emitter Breakdown Voltage 1200 V CES T = 25C 65 C I Continuous Collector Current C T = 80C 40 A C I Pulsed Collector Current T = 25C 70 CM C V Gate Emitter Voltage 20 V GE T = 25C P Maximum Power Dissipation C 220 W D RBSOA Reverse Bias Safe Operating Area T = 150C 70A 1100V j These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com 1-6 www.microsemi.com APT40GL120JU2 Rev 1 October, 2012 APT40GL120JU2 All ratings T = 25C unless otherwise specified j Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit I Zero Gate Voltage Collector Current V = 0V, V = 1200V 250 A CES GE CE T = 25C 1.85 2.25 V = 15V GE j V Collector Emitter saturation Voltage V CE(sat) I = 35A C T = 150C 2.25 j V Gate Threshold Voltage V = V , I = 1.2mA 5.0 5.8 6.5 V GE(th) GE CE C I Gate Emitter Leakage Current V = 20V, V = 0V 400 nA GES GE CE Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit C Input Capacitance 1950 ies V = 0V GE V = 25V pF C Output Capacitance 155 CE oes f = 1MHz C Reverse Transfer Capacitance 115 res V = 15V V =600V GE CE Q Gate charge 0.27 C G I =35A C Inductive Switching (25C) T Turn-on Delay Time 130 d(on) V = 15V GE T Rise Time 20 r V = 600V ns CE T Turn-off Delay Time 300 d(off) I = 35A C T Fall Time 45 f R = 12 G Inductive Switching (150C) T Turn-on Delay Time 150 d(on) V = 15V GE T Rise Time 35 r V = 600V ns CE T Turn-off Delay Time 350 d(off) I = 35A C T Fall Time R = 12 80 f G T = 25C 2.6 J V = 15V GE E Turn-on Switching Energy mJ on V = 600V T = 150C 4 CE J I = 35A C T = 25C 2 J E Turn-off Switching Energy mJ off R = 12 G T = 150C 3 J V 15V V = 900V GE Bus I Short Circuit data 140 A sc t 10s T = 150C p j Chopper diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit V Maximum Peak Repetitive Reverse Voltage 1200 V RRM T = 25C 100 j I Maximum Reverse Leakage Current V =1200V A RM R T = 150C 500 j I DC Forward Current Tc = 80C 30 A F I = 30A 2.6 3.1 F V Diode Forward Voltage I = 60A 3.2 V F F I = 30A T = 125C 1.8 F j T = 25C 300 j t Reverse Recovery Time ns rr I = 30A F T = 125C 380 j V = 800V R T = 25C 360 j di/dt =200A/s Q Reverse Recovery Charge nC rr T = 125C 1700 j 2-6 www.microsemi.com APT40GL120JU2 Rev 1 October, 2012

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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