APT5010JFLL 500V 41A 0.100 R POWER MOS 7 FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering R DS(ON) and Q . Power MOS 7 combines lower conduction and switching losses g along with exceptionally fast switching speeds inherent with APT sUL Recognize ISOTOP patented metal gate structure. Lower Input Capacitance Increased Power Dissipation D Lower Miller Capacitance Easier To Drive G Lower Gate Charge, Qg Popular SOT-227 Package FAST RECOVERY BODY DIODE S MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter APT5010JFLL UNIT V 500 Volts Drain-Source Voltage DSS I Continuous Drain Current T = 25C 41 D C Amps 1 I Pulsed Drain Current 164 DM V Gate-Source Voltage Continuous 30 GS Volts V Gate-Source Voltage Transient GSM 40 Total Power Dissipation T = 25C Watts 378 C P D Linear Derating Factor W/C 3.03 T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 300 L 1 I Amps (Repetitive and Non-Repetitive) Avalanche Current 41 AR 1 E Repetitive Avalanche Energy 35 AR mJ 4 E Single Pulse Avalanche Energy 1600 AS STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Drain-Source Breakdown Voltage (V = 0V, I = 250A) 500 Volts DSS GS D 2 R Drain-Source On-State Resistance (V = 10V, I = 20.5A) 0.100 Ohms DS(on) GS D Zero Gate Voltage Drain Current (V = 500V, V = 0V) 250 DS GS I A DSS Zero Gate Voltage Drain Current (V = 400V, V = 0V, T = 125C) 1000 DS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) nA 100 GSS GS DS V Gate Threshold Voltage (V = V , I = 2.5mA) Volts 35 GS(th) DS GS D CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - DYNAMIC CHARACTERISTICS APT5010JFLL Symbol MIN TYP MAX Characteristic Test Conditions UNIT C Input Capacitance V = 0V 4360 iss GS V = 25V C pF Output Capacitance DS 895 oss f = 1 MHz C Reverse Transfer Capacitance 60 rss Q 3 Total Gate Charge V = 10V 95 g GS V = 300V Q nC Gate-Source Charge DD 24 gs I = 41A 25C D Q Gate-Drain Mille) Charge 50 gd RESISTIVE SWITCHING t 11 Turn-on Delay Time d(on) V = 15V GS t 13 Rise Time r ns V = 300V DD t 25 Turn-off Delay Time d(off) I = 41A 25C D t R = 0.6 Fall Time 3 f G INDUCTIVE SWITCHING 25C 6 E 485 Turn-on Switching Energy on V = 333V, V = 15V DD GS E Turn-off Switching Energy I = 41A, R = 5 455 off D G J INDUCTIVE SWITCHING 125C 6 E 755 Turn-on Switching Energy on V = 333V V = 15V DD GS E Turn-off Switching Energy I = 41A, R = 5 530 off D G SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT Continuous Source Current (Body Diode) I S 41 Amps 1 I (Body Diode) Pulsed Source Current SM 164 2 V Diode Forward Voltage (V = 0V, I = -41A) Volts SD GS S 1.3 dv dv 5 Peak Diode Recovery / / V/ns dt dt 15 Reverse Recovery Time T = 25C 280 j t rr ns di (I = -41A, / = 100A/s) S dt T = 125C 600 j Reverse Recovery Charge T = 25C 2.28 j C Q di rr (I = -41A, / = 100A/s) S dt T = 125C 6.41 j Peak Recovery Current T = 25C 15.7 j I Amps RRM di (I = -41A, / = 100A/s) S dt T = 125C 23.6 j THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT Junction to Case R 0.33 JC C/W R Junction to Ambient 40 JA 1 Repetitive Rating: Pulse width limited by maximum junction 4 Starting T = +25C, L = 1.65mH, R = 25, Peak I = 41A j G L dv temperature 5 / numbers reflect the limitations of the test circuit rather than the dt di 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% device itself. I -I 41A / 700A/s V V T 150C dt S D R DSS J 3 See MIL-STD-750 Method 3471 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.35 0.9 0.30 0.25 0.7 0.20 0.5 Note: 0.15 t 1 0.3 0.10 t 2 t 1 Duty Factor D = / t 2 0.05 0.1 Peak T = P x Z + T J DM JC C SINGLE PULSE 0.05 0 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 050-7029 Rev E 9-2004 Z , THERMAL IMPEDANCE (C/W) JC P DM