APT50GP60J 1200V POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency,UL Recognize high voltage switching applications and has been optimized for high frequency ISOTOP switchmode power supplies. Low Conduction Loss 200 kHz operation 400V, 19A C Low Gate Charge 100 kHz operation 400V, 26A Ultrafast Tail Current shutoff SSOA rated G E MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter APT50GP60J UNIT V Collector-Emitter Voltage 600 CES Gate-Emitter Voltage V 20 Volts GE 30 V Gate-Emitter Voltage Transient GEM I 100 Continuous Collector Current T = 25C C1 C Amps I 46 Continuous Collector Current T = 110C C2 C 1 I Pulsed Collector Current T = 25C 190 CM C SSOA Safe Operating Area T = 150C 190A 600V J Watts P 329 Total Power Dissipation D T ,T -55 to 150 Operating and Storage Junction Temperature Range J STG C T Max. Lead Temp. for Soldering: 0.063 from Case for 10 Sec. 300 L STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Collector-Emitter Breakdown Voltage (V = 0V, I = 500A) 600 CES GE C V Gate Threshold Voltage (V = V , I = 1mA, T = 25C) 3 4.5 6 GE(TH) CE GE C j Volts Collector-Emitter On Voltage (V = 15V, I = 50A, T = 25C) 2.2 2.7 GE C j V CE(ON) Collector-Emitter On Voltage (V = 15V, I = 50A, T = 125C) 2.1 GE C j 2 Collector Cut-off Current (V = 600V, V = 0V, T = 25C) 500 CE GE j A I CES 2 Collector Cut-off Current (V = 600V, V = 0V, T = 125C) 2500 CE GE j Gate-Emitter Leakage Current (V = 20V) I nA 100 GES GE CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - APT50GP60J DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions MIN TYP MAX UNIT C Input Capacitance 5700 Capacitance ies C Output Capacitance V = 0V, V = 25V 465 pF oes GE CE C f = 1 MHz Reverse Transfer Capacitance 30 res V Gate-to-Emitter Plateau Voltage 7.5 V GEP Gate Charge 3 Q V = 15V Total Gate Charge GE 165 g V = 300V Q nC Gate-Emitter Charge CE 40 ge I = 50A C Q Gate-Collector Mille) Charge gc 50 SSOA Safe Operating Area T = 150C, R = 5, V = 190 A J G GE 15V, L = 100H,V = 600V CE t Turn-on Delay Time 19 Inductive Switching (25C) d(on) V = 400V CC t Current Rise Time 36 r ns V = 15V GE t Turn-off Delay Time 83 d(off) I = 50A C t 60 Current Fall Time f R = 5 G 4 E Turn-on Switching Energy 465 on1 T = +25C J 5 E Turn-on Switching Energy (Diode) 837 J on2 6 E Turn-off Switching Energy 637 off t Turn-on Delay Time Inductive Switching (125C) 19 d(on) V = 400V t CC Current Rise Time 36 r ns V = 15V GE t Turn-off Delay Time 116 d(off) I = 50A C t Current Fall Time 86 f R = 5 G 4 E Turn-on Switching Energy 465 on1 T = +125C J 5 Turn-on Switching Energy (Diode) E 1261 on2 J 6 E Turn-off Switching Energy 1058 off THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT R Junction to Case (IGBT) .38 JC C/W R Junction to Case (DIODE) N/A JC gm W Package Weight 29.2 T 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, I includes both IGBT and FRED leakages ces 3 See MIL-STD-750 Method 3471. 4E is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current on1 adding to the IGBT turn-on loss. (See Figure 24.) 5E is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching on2 loss. A Combi device is used for the clamping diode as shown in the E test circuit. (See Figures 21, 22.) on2 6E is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) off APT Reserves the right to change, without notice, the specifications and information contained herein. 050-7435 Rev A 4-2003