APT50GR120JD30 APT50GR120JD30 1200V, 50A, V = 2.5V Typical ce(on) Ultra Fast NPT - IGBT The Ultra Fast NPT - IGBT family of products is the newest generation of planar IGBTs optimized for outstanding ruggedness and the best trade-off between conduction and switching losses.UL Recognize Features file E145592 Low Saturation Voltage Short Circuit Withstand Rated ISOTOP Combi (IGBT and Diode) Low Tail Current High Frequency Switching RoHS Compliant Ultra Low Leakage Current Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is recommended for applications such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS). MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter Ratings Unit V Collector Emitter Voltage 1200 ces V V Gate-Emitter Voltage 30 GE I Continuous Collector Current T = 25C 84 C1 C I Continuous Collector Current T = 90C 50 A C2 C 1 I Pulsed Collector Current 200 CM SCWT Short Circuit Withstand Time: V = 600V, V = 15V, T =125C 10 s CE GE C P Total Power Dissipation T = 25C 417 W D C T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Max. Lead Temp. for Soldering: 0.063 from Case for 10 Sec. 300 L STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter Min Typ Max Unit V Collector-Emitter Breakdown Voltage (V = 0V, I = 1.1mA) 1200 (BR)CES GE C V Gate Threshold Voltage (V = V , I = 2.5mA, T = 25C) 3.5 5.0 6.5 GE(TH) CE GE C j Volts Collector-Emitter On Voltage (V = 15V, I = 50A, T = 25C) 2.5 3.2 GE C j V CE(ON) Collector-Emitter On Voltage (V = 15V, I = 50A, T = 125C) 3.3 GE C j Collector-Emitter On Voltage (V = 15V, I = 100A, T = 25C) 3.5 GE C j 2 Collector Cut-off Current (V = 1200V, V = 0V, T = 25C) 20 1100 CE GE j I A CES 2 Collector Cut-off Current (V = 1200V, V = 0V, T = 125C) 200 CE GE j I Gate-Emitter Leakage Current (V = 20V) 250 nA GES GE CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - DYNAMIC CHARACTERISTICS APT50GR120JD30 Symbol Parameter Test Conditions Min Typ Max Unit C Input Capacitance Capacitance 5550 ies C Output Capacitance V = 0V, V = 25V 500 pF oes GE CE C Reverse Transfer Capacitance f = 1MHz 145 res V Gate to Emitter Plateau Voltage 7.5 V GEP Gate Charge 3 Q Total Gate Charge 330 445 g V = 15V GE Q Gate-Emitter Charge 52 72 ge V = 600V nC CE Q Gate- Collector Charge I = 50A 156 200 gc C t Turn-On Delay Time Inductive Switching (25C) 28 d(on) t Current Rise Time V = 600V 38 r CC ns t Turn-Off Delay Time V = 15V 237 d(off) GE t Current Fall Time I = 50A 45 f C 5 4 E Turn-On Switching Energy 2135 3200 R = 4.3 on2 G J 6 1478 2210 E Turn-Off Switching Energy T = +25C off J t Turn-On Delay Time Inductive Switching (125C) 28 d(on) t Current Rise Time V = 600V 38 r CC ns t Turn-Off Delay Time V = 15V 270 d(off) GE t Current Fall Time 54 I = 50A f C 5 4 E Turn-On Switching Energy 3157 4765 R = 4.3 on2 G J 6 E Turn-Off Switching Energy 1884 2820 T = +125C off J THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic Min Typ Max Unit Junction to Case Thermal Resistance (IGBT) .30 R JC Junction to Case Thermal Resistance (Diode) 1.1 C/W V RMS Voltage (50-60Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) 2500 isolation 1.03 oz W Package Weight T 29.2 g 10 lbin Torque Maximum Mounting Torque 1.1 Nm 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 380s, duty cycle < 2%. 3 See Mil-Std-750 Method 3471. 4 R is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) G 5 E is the energy loss at turn-on and includes the charge stored in the freewheeling diode. on2 6 E is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. off Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.35 0.30 D = 0.9 0.25 0.7 0.20 0.5 Note: 0.15 t 1 0.3 0.10 t 2 t 1 t Duty Factor D = / 0.05 2 0.1 Peak T = P x Z + T J DM JC C SINGLE PULSE 0.05 0 -2 -5 -4 -3 10 10 10 0.1 1 10 RECTANGULAR PULSE DURATION (SECONDS) Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 052-6407 Rev B 3-2013 Z , THERMAL IMPEDANCE (C/W) JC P DM