TYPICAL PERFORMANCE CURVES APT60GF120JRDQ3 1200V APT60GF120JRDQ3 FAST IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epi- taxial Diode (FRED) offers superior ruggedness and fast switching speed.UL Recognize file E145592 ISOTOP Low Forward Voltage Drop High Freq. Switching to 20KHz RBSOA and SCSOA Rated Ultra Low Leakage Current C Ultrafast Soft Recovery Anti-parallel Diode G E MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specied. C Symbol Parameter UNIT APT60GF120JRDQ3 V Collector-Emitter Voltage 1200 CES Volts V Gate-Emitter Voltage 30 GE I Continuous Collector Current T = 25C 149 C1 C I Continuous Collector Current T = 100C 79 Amps C2 C 1 I Pulsed Collector Current 300 CM Switching Safe Operating Area T = 150C SSOA 300A 1200V J P Total Power Dissipation Watts 625 D T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX Units V Collector-Emitter Breakdown Voltage (V = 0V, I = 350A) 1200 (BR)CES GE C V Gate Threshold Voltage (V = V , I = 500A, T = 25C) GE(TH) 4.5 5.5 6.5 CE GE C j Volts Collector-Emitter On Voltage (V = 15V, I = 100A, T = 25C) 2.5 3.0 GE C j V CE(ON) Collector-Emitter On Voltage (V = 15V, I = 100A, T = 125C) 3.1 GE C j 2 Collector Cut-off Current (V = 1200V, V = 0V, T = 25C) 0.35 CE GE j I mA CES 2 Collector Cut-off Current (V = 1200V, V = 0V, T = 125C) 3.0 CE GE j I Gate-Emitter Leakage Current (V = 20V) nA GES 100 GE CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - APT60GF120JRDQ3 DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions MIN TYP MAX UNIT C Input Capacitance Capacitance 7080 ies C pF Output Capacitance V = 0V, V = 25V 785 oes GE CE C f = 1 MHz Reverse Transfer Capacitance res 435 V V Gate-to-Emitter Plateau Voltage Gate Charge 10.0 GEP 3 Q V = 15V Total Gate Charge 685 g GE V = 600V Q nC Gate-Emitter Charge CE 80 ge I = 100A Q C Gate-Collector Mille) Charge 420 gc T = 150C, R = 1.0, V = J G GE Switching Safe Operating Area SSOA 300 A 15V, L = 100H,V = 1200V CE t Inductive Switching (25C) Turn-on Delay Time 44 d(on) V = 800V t Current Rise Time 100 CC r ns t V = 15V Turn-off Delay Time 460 d(off) GE I = 100A t C Current Fall Time 38 f R = 1.0 4 G E Turn-on Switching Energy 14.6 on1 T = +25C 5 J E mJ Turn-on Switching Energy (With Diode) 16.4 on2 6 E Turn-off Switching Energy 6.5 off t Inductive Switching (125C) Turn-on Delay Time 44 d(on) t V = 800V Current Rise Time 100 r CC ns V = 15V t Turn-off Delay Time GE 540 d(off) I = 100A t C Current Fall Time 125 f R = 1.0 4 4 G E 14.6 Turn-on Switching Energy on1 T = +125C 55 J E mJ Turn-on Switching Energy (With Diode) 21.4 on2 6 E Turn-off Switching Energy 9.2 off THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT R Junction to Case (IGBT) 0.20 JC C/W R Junction to Case (DIODE) N/A JC V RMS Voltage (50-60Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.) Volts 2500 Isolation oz 1.03 W Package Weight T 29.2 gm 10 Ibin Torque Maximum Terminal & Mounting Torque 1.1 Nm 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, I includes both IGBT and diode leakages ces 3 See MIL-STD-750 Method 3471. 4 E is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current on1 adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in gure 21, but with a Silicon Carbide diode. 5 E is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching on2 loss. (See Figures 21, 22.) 6 E is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) off APT Reserves the right to change, without notice, the specications and information contained herein. 052-6287 Rev A 4-2006