APT60GF60JU3
ISOTOP Buck chopper
V = 600V
CES
I = 60A @ Tc = 95C
NPT IGBT
C
C
Application
AC and DC motor control
Switched Mode Power Supplies
G
Features
Non Punch Through (NPT) THUNDERBOLT IGBT
- Low voltage drop
E
- Low tail current
- Switching frequency up to 100 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
A
- RBSOA and SCSOA rated
ISOTOP Package (SOT-227)
Very low stray inductance
High level of integration
A
Benefits
E
Outstanding performance at high frequency operation
Stable temperature behavior
Very rugged
C
G
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive T of V
C CEsat
RoHS Compliant
ISOTOP
Absolute maximum ratings
Symbol Parameter Max ratings Unit
V Collector - Emitter Breakdown Voltage 600 V
CES
I T = 25C 93
C1 C
Continuous Collector Current
A
I T = 95C 60
C2 C
I Pulsed Collector Current T = 25C 360
CM C
V Gate Emitter Voltage 20 V
GE
P Maximum Power Dissipation T = 25C 378 W
D C
I RBSOA clamped Inductive load Current R =11 T = 25C 360 A
LM G C
IF Maximum Average Forward Current Duty cycle=0.5 T = 80C 30
AV C
A
IF RMS Forward Current (Square wave, 50% duty) 39
RMS
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
1-9
www.microsemi.com
APT60GF60JU3 Rev 2 October, 2012 APT60GF60JU3
All ratings @ T = 25C unless otherwise specified
j
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
BV Collector - Emitter Breakdown Voltage V = 0V, I = 0.5mA 600 V
CES GE C
T = 25C
j 80
V = 0V
GE
I Zero Gate Voltage Collector Current A
CES
V = 600V T = 125C
CE j 2000
T = 25C
V =15V j 2.0 2.5
GE
V Collector Emitter on Voltage V
CE(on)
I = 60A
T = 125C
C 2.8
j
V Gate Threshold Voltage V = V , I = 500A 3 4 5 V
GE(th) GE CE C
I Gate Emitter Leakage Current V = 20V, V = 0V 100 nA
GES GE CE
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
C Input Capacitance V = 0V 3125 3590
ies GE
V = 25V
C Output Capacitance CE 310 450 pF
oes
f = 1MHz
C Reverse Transfer Capacitance 180 310
res
Q Total gate Charge 257 410
g V = 15V
GS
Q Gate Emitter Charge V = 300V 19 30 nC
Bus
ge
I = 60A
C
Q Gate Collector Charge 120 180
gc
T Turn-on Delay Time Resistive Switching (25C) 20 40
d(on)
V = 15V
GE
T Rise Time 95 190
r
V = 300V ns
Bus
T Turn-off Delay Time 315 470
d(off)
I = 60A
C
T Fall Time R = 5 245 490
f
G
Inductive Switching (25C)
T Turn-on Delay Time 26 50
d(on)
V = 15V
GE
T Rise Time 63 125
r
ns
V = 400V
Bus
T Turn-off Delay Time 395 590
d(off)
I = 60A
C
T Fall Time 68 140
f
R = 5
G
E Total switching Losses 3.4 7 mJ
ts
Inductive Switching (150C)
T Turn-on Delay Time 25 50
d(on)
V = 15V
GE
T Rise Time 59 120
r
ns
V = 400V
Bus
T Turn-off Delay Time 430 650
d(off)
I = 60A
C
T Fall Time 65 130
f
R = 5
G
E Turn-on Switching Energy 1.6 3.2
on
E Turn-off Switching Energy 2.4 4.8 mJ
off
E Total switching Losses 4.0 8.0
ts
2-9
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APT60GF60JU3 Rev 2 October, 2012