X-On Electronics has gained recognition as a prominent supplier of APT60S20SG/TR schottky diodes & rectifiers across the USA, India, Europe, Australia, and various other global locations. APT60S20SG/TR schottky diodes & rectifiers are a product manufactured by Microchip. We provide cost-effective solutions for schottky diodes & rectifiers, ensuring timely deliveries around the world.

APT60S20SG/TR Microchip

APT60S20SG/TR electronic component of Microchip
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See Product Specifications
Part No.APT60S20SG/TR
Manufacturer: Microchip
Category:Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers Schottky Discrete RECTIFIER
Datasheet: APT60S20SG/TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 5.7108 ea
Line Total: USD 5.71

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 05 Jun to Tue. 11 Jun

MOQ : 1
Multiples : 1
1 : USD 5.7108
10 : USD 4.454
25 : USD 4.2404
50 : USD 4.1982
100 : USD 3.9896
250 : USD 3.9857
500 : USD 3.9817
1000 : USD 3.9779
3000 : USD 3.974
6000 : USD 3.97
15000 : USD 3.966
30000 : USD 3.9622
75000 : USD 3.9595

     
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We are delighted to provide the APT60S20SG/TR from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the APT60S20SG/TR and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

TO-247 12 1 - Cathode 3 2 - Anode D PAK APT60S20B(G) 200V 75A Back of Case -Cathode APT60S20S(G) 200V 75A 1 2 1 2 HIGH VOLTAGE SCHOTTKY DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS Ultrafast Recovery Times Parallel Diode Low Losses -Switchmode Power Supply Soft Recovery Characteristics Low Noise Switching -Inverters Free Wheeling Diode Popular TO-247 Package or Cooler Operation -Motor Controllers 3 Surface Mount D PAK Package -Converters Low Forward Voltage Higher Reliability Systems Snubber Diode Uninterruptible Power Supply (UPS) High Blocking Voltage Increased System Power 48 Volt Output Rectifiers Density Low Leakage Current High Speed Rectifiers MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Characteristic / Test Conditions APT60S20B S(G) UNIT V Maximum D.C. Reverse Voltage R V Maximum Peak Repetitive Reverse Voltage 200 Volts RRM V Maximum Working Peak Reverse Voltage RWM I (AV) Maximum Average Forward Current (T = 123C, Duty Cycle = 0.5) 75 F C I (RMS) RMS Forward Current (Square wave, 50% duty) 208 Amps F I Non-Repetitive Forward Surge Current (T = 45C, 8.3ms) 600 FSM J T ,T Operating and StorageTemperature Range -55 to 150 J STG C T 300 Lead Temperature for 10 Sec. L E Avalanche Energy (2A, 30mH) 60 mJ VAL STATIC ELECTRICAL CHARACTERISTICS Symbol MIN TYP MAX UNIT I = 60A .83 .90 F V I = 120A Forward Voltage .98 Volts F F I = 60A, T = 125C .72 F J V = 200V 1 R I Maximum Reverse Leakage Current mA RM V = 200V, T = 125C 25 R J C 300 pF Junction Capacitance, V = 200V T R Microsemi Website - DYNAMIC CHARACTERISTICS APT60S20B S(G) Symbol Characteristic Test Conditions MIN TYP MAX UNIT t ns Reverse Recovery Time - 55 rr I = 60A, di /dt = -200A/s F F Q - 160 nC Reverse Recovery Charge rr V = 133V, T = 25C R C I -5 - Amps Maximum Reverse Recovery Current RRM t ns - 100 Reverse Recovery Time rr I = 60A, di /dt = -200A/s F F Q - 490 nC Reverse Recovery Charge rr V = 133V, T = 125C R C I -10 - Amps Maximum Reverse Recovery Current RRM t -80 ns Reverse Recovery Time rr I = 60A, di /dt = -700A/s F F Q - 1100 nC Reverse Recovery Charge rr V = 133V, T = 125C R C I -27 Amps Maximum Reverse Recovery Current RRM THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT R Junction-to-Case Thermal Resistance .30 JC C/W R Junction-to-Ambient Thermal Resistance 40 JA 0.22 oz W Package Weight T 5.9 g 10 lbin Torque Maximum Mounting Torque 1.1 Nm Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.35 0.30 D = 0.9 0.25 0.7 0.20 0.5 Note: 0.15 t 1 0.3 0.10 t 2 t 1 Duty Factor D = / t 0.05 SINGLE PULSE 2 0.1 Peak T = P x Z + T J DM JC C 0.05 0 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION T ( C) T ( C) J C 0.0218 0.119 0.160 Dissipated Power (Watts) 0.00450 0.0119 0.121 Z are the external thermal EXT impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL 053-6042 Rev D 7-2006 Z , THERMAL IMPEDANCE (C/W) JC Z EXT P DM

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
ATM
Atmel
Atmel Wireless (VA)
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Microsemi Corporation
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