APTGT20H60T1G Microchip

APTGT20H60T1G Full bridge V = 600V CES Trench + Field Stop IGBT3 I = 20A Tc = 80C C Power Module Application 3 4 Welding converters Switched Mode Power Supplies Q3 Q1 Uninterruptible Power Supplies CR1 CR3 Motor control 2 5 6 Features 1 Trench + Field Stop IGBT3 Technology Q4 Q2 - Low voltage drop CR2 CR4 - Low tail current 7 9 - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current 8 10 - RBSOA and SCSOA rated Very low stray inductance 12 11 NTC - Symmetrical design Internal thermistor for temperature monitoring High level of integration Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant Pins 3/4 must be shorted together Absolute maximum ratings Symbol Parameter Max ratings Unit V Collector - Emitter Breakdown Voltage 600 V CES T = 25C 32 C I Continuous Collector Current C A T = 80C 20 C I Pulsed Collector Current T = 25C 40 CM C V Gate Emitter Voltage 20 V GE T = 25C P Maximum Power Dissipation 62 W D C T = 150C RBSOA Reverse Bias Safe Operating Area 40A 550V J These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com 1 6 www.microsemi.com APTGT20H60T1G Rev 1 October, 2012 APTGT20H60T1G All ratings T = 25C unless otherwise specified j Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit I Zero Gate Voltage Collector Current V = 0V, V = 600V 250 A CES GE CE T = 25C 1.5 1.9 V =15V j GE V Collector Emitter Saturation Voltage V CE(sat) I = 20A C T = 150C 1.7 j V Gate Threshold Voltage V = V , I = 300A 5.0 5.8 6.5 V GE(th) GE CE C I Gate Emitter Leakage Current V = 20V, V = 0V 300 nA GES GE CE Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit C Input Capacitance 1100 ies V = 0V GE V = 25V pF C Output Capacitance 70 oes CE f = 1MHz C Reverse Transfer Capacitance 35 res Inductive Switching (25C) T Turn-on Delay Time 110 d(on) V = 15V GE T Rise Time 45 r V = 300V ns Bus T Turn-off Delay Time 200 d(off) I = 20A C T Fall Time 40 f R = 12 G Inductive Switching (150C) T Turn-on Delay Time 120 d(on) V = 15V GE T Rise Time 50 r V = 300V ns Bus T Turn-off Delay Time I = 20A 250 d(off) C R = 12 T Fall Time 60 f G T = 25C 0.11 V = 15V j GE E Turn-on Switching Energy mJ on V = 300V Bus T = 150C 0.2 j I = 20A C T = 25C 0.5 j E Turn-off Switching Energy mJ off R = 12 G T = 150C 0.7 j Reverse diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit V Maximum Peak Repetitive Reverse Voltage 600 V RRM T = 25C 100 j I Maximum Reverse Leakage Current V =600V A RM R T = 150C 350 j I DC Forward Current Tc = 80C 20 A F I = 20A T = 25C 1.6 2 F j V Diode Forward Voltage F V = 0V T = 150C 1.5 V GE j T = 25C 100 j t Reverse Recovery Time ns rr T = 150C 150 j I = 20A F T = 25C 1.1 j Q Reverse Recovery Charge V = 300V C R rr T = 150C 2.3 di/dt =1600A/s j T = 25C 0.23 j E Reverse Recovery Energy mJ r T = 150C 0.50 j 2 6 www.microsemi.com APTGT20H60T1G Rev 1 October, 2012