APTMC120TAM12CTPAG V = 1200V DSS Triple phase leg R = 12m max Tj = 25C DSon SiC MOSFET Power Module I = 220A Tc = 25C D Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features SiC Power MOSFET - High speed switching - Low R DS(on) - Ultra low loss SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Very low stray inductance Kelvin source for easy drive Internal thermistor for temperature monitoring High level of integration AlN substrate for improved thermal performance Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant All ratings T = 25C unless otherwise specified j These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com 1-8 www.microsemi.com APTMC120TAM12CTPAG Rev 0 May, 2014 APTMC120TAM12CTPAG Absolute maximum ratings (per SiC MOSFET) Symbol Parameter Max ratings Unit V Drain - Source Voltage 1200 V DSS T = 25C 220 c I Continuous Drain Current D T = 80C 165 A c I Pulsed Drain current 440 DM V Gate - Source Voltage -10/25V V GS R Drain - Source ON Resistance 12 m DSon P Maximum Power Dissipation T = 25C 925 W D c Electrical Characteristics (per SiC MOSFET) Symbol Characteristic Test Conditions Min Typ Max Unit I Zero Gate Voltage Drain Current V = 0V , V = 1200V 300 A DSS GS DS T = 25C 8 12 V = 20V j GS R Drain Source on Resistance m DS(on) I = 150A D T = 150C 14 21 j V Gate Threshold Voltage V = V , I = 30mA 2.1 2.4 V GS(th) GS DS D I Gate Source Leakage Current V = 20 V, V = 0V 1.8 A GSS GS DS Dynamic Characteristics (per SiC MOSFET) Symbol Characteristic Test Conditions Min Typ Max Unit C Input Capacitance 8.4 iss V = 0V GS C Output Capacitance V = 1000V 0.66 nF oss DS f = 1MHz C Reverse Transfer Capacitance 0.045 rss Q Total gate Charge 483 g V = -5/+20V GS Q Gate Source Charge V = 800V 138 nC gs Bus I = 150A D Q Gate Drain Charge 150 gd T Turn-on Delay Time 35 d(on) V = -5/+20V GS T Rise Time 40 r V = 800V Bus ns I =150A , T =150C T Turn-off Delay Time D J 150 d(off) R = 5.3 R = 6.7 L Gext T Fall Time 70 f Inductive Switching E Turn on Energy T = 150C 3.3 on V = -5/+20V j GS V = 600V mJ Bus I = 150A D E Turn off Energy T = 150C 1.8 off j R = 6.7 Gext R Internal gate resistance 2 Gint R Junction to Case Thermal Resistance 0.135 C/W thJC (per SiC MOSFET) Source - Drain diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit V = -5V, I = 75A 3.3 GS SD V Diode Forward Voltage V SD V = -2V, I = 75A 3.1 GS SD t Reverse Recovery Time 45 ns rr I = 150A V = -5V SD GS Q Reverse Recovery Charge 1.2 C rr V = 800V di /dt = 3000A/s R F I Reverse Recovery Current 40 A rr 2-8 www.microsemi.com APTMC120TAM12CTPAG Rev 0 May, 2014