Product Information

AT24C512C-MAHM-T

AT24C512C-MAHM-T electronic component of Microchip

Datasheet
EEPROM Memory IC 512Kb (64K x 8) I²C 400 kHz 900 ns 8-UDFN (2x3)

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5000: USD 1.265 ea
Line Total: USD 6325

4850 - Global Stock
Ships to you between
Fri. 10 May to Tue. 14 May
MOQ: 5000  Multiples: 5000
Pack Size: 5000
Availability Price Quantity
2845 - Warehouse 1


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 1
Multiples : 1
1 : USD 1.4697
10 : USD 1.4496
25 : USD 1.4295
100 : USD 1.4094
250 : USD 1.3813
500 : USD 1.3813
1000 : USD 1.3813

4850 - Warehouse 2


Ships to you between Fri. 10 May to Tue. 14 May

MOQ : 5000
Multiples : 5000
5000 : USD 1.265

2845 - Warehouse 3


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 6
Multiples : 1
6 : USD 1.4697
10 : USD 1.4496
25 : USD 1.4295
100 : USD 1.4094
250 : USD 1.3813

     
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AT24C512C IC-Compatible (Two-Wire) Serial EEPROM 512Kbit (65,536 x 8) Features Low-Voltage and Standard-Voltage Operation: V = 1.7V to 3.6V CC V = 2.5V to 5.5V CC Internally Organized as 65,536 x 8 (512K) Industrial Temperature Range: -40C to +85C 2 I C-Compatible (Two-Wire) Serial Interface: 100 kHz Standard mode, 1.7V to 5.5V 400 kHz Fast mode, 1.7V to 5.5V 1 MHz Fast Mode Plus (FM+), 2.5V to 5.5V Schmitt Triggers, Filtered Inputs for Noise Suppression Bidirectional Data Transfer Protocol Write-Protect Pin for Full Array Hardware Data Protection Ultra Low Active Current (3 mA maximum) and Standby Current (6 A maximum) 128-Byte Page Write Mode: Partial page writes allowed Random and Sequential Read Modes Self-Timed Write Cycle within 5 ms Maximum ESD Protection > 4,000V High Reliability: Endurance: 1,000,000 write cycles Data retention: 100 years Green Package Options (Lead-free/Halide-free/RoHS compliant) Die Sale Options: Wafer Form and Tape and Reel Available Packages 8-Lead SOIC, 8-Lead SOIJ, 8-Lead TSSOP, 8-Pad UDFN, 8-Ball WLCSP and 8-Ball VFBGA Datasheet DS20006161C-page 1 2019-2021 Microchip Technology Inc. AT24C512C Table of Contents Features......................................................................................................................................................... 1 Packages........................................................................................................................................................1 1. Package Types (not to scale)..................................................................................................................4 2. Pin Descriptions...................................................................................................................................... 5 2.1. Device Address Inputs (A0, A1, A2).............................................................................................5 2.2. Ground......................................................................................................................................... 5 2.3. Serial Data (SDA).........................................................................................................................5 2.4. Serial Clock (SCL)........................................................................................................................5 2.5. Write-Protect (WP)....................................................................................................................... 6 2.6. Device Power Supply................................................................................................................... 6 3. Description.............................................................................................................................................. 7 3.1. System Configuration Using Two-Wire Serial EEPROMs ...........................................................7 3.2. Block Diagram..............................................................................................................................8 4. Electrical Characteristics.........................................................................................................................9 4.1. Absolute Maximum Ratings..........................................................................................................9 4.2. DC and AC Operating Range.......................................................................................................9 4.3. DC Characteristics....................................................................................................................... 9 4.4. AC Characteristics......................................................................................................................10 4.5. Electrical Specifications..............................................................................................................11 5. Device Operation and Communication................................................................................................. 13 5.1. Clock and Data Transition Requirements...................................................................................13 5.2. Start and Stop Conditions.......................................................................................................... 13 5.3. Acknowledge and No-Acknowledge...........................................................................................14 5.4. Standby Mode............................................................................................................................ 14 5.5. Software Reset...........................................................................................................................14 6. Memory Organization............................................................................................................................16 6.1. Device Addressing..................................................................................................................... 16 7. Write Operations................................................................................................................................... 17 7.1. Byte Write...................................................................................................................................17 7.2. Page Write..................................................................................................................................17 7.3. Acknowledge Polling.................................................................................................................. 18 7.4. Write Cycle Timing..................................................................................................................... 18 7.5. Write Protection..........................................................................................................................19 8. Read Operations...................................................................................................................................20 8.1. Current Address Read................................................................................................................20 8.2. Random Read............................................................................................................................ 20 8.3. Sequential Read.........................................................................................................................21 9. Device Default Condition from Microchip.............................................................................................. 22 DS20006161C-page 2 Datasheet 2019-2021 Microchip Technology Inc.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
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