Product Information

AT28C010E-15TU

AT28C010E-15TU electronic component of Microchip

Datasheet
Memory; EEPROM; parallel 8bit; 128kx8bit; 4.5÷5.5V; TSOP32; 150ns

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 39.0659 ea
Line Total: USD 39.07

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 156
Multiples : 156

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AT28C010E-15TU
Microchip

156 : USD 68.6737

0 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1
Multiples : 1

Stock Image

AT28C010E-15TU
Microchip

1 : USD 70.4922

0 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1
Multiples : 1

Stock Image

AT28C010E-15TU
Microchip

1 : USD 39.0659
10 : USD 37.7294
50 : USD 37.3819
100 : USD 37.2483

     
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Features Fast Read Access Time 120 ns Automatic Page Write Operation Internal Address and Data Latches for 128 Bytes Internal Control Timer Fast Write Cycle Time Page Write Cycle Time 10 ms Maximum 1 to 128-byte Page Write Operation Low Power Dissipation 1-megabit 40 mA Active Current 200 A CMOS Standby Current (128K x 8) Hardware and Software Data Protection DATA Polling for End of Write Detection Paged Parallel High Reliability CMOS Technology 4 5 or 10 Cycles Endurance: 10 EEPROM Data Retention: 10 Years Single 5V 10% Supply CMOS and TTL Compatible Inputs and Outputs AT28C010 JEDEC Approved Byte-wide Pinout Industrial Temperature Ranges Green (Pb/Halide-free) Packaging Option Only 1. Description The AT28C010 is a high-performance electrically-erasable and programmable read- only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Man- ufactured with Atmels advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 mW. When the device is deselected, the CMOS standby current is less than 200 A. The AT28C010 is accessed like a Static RAM for the read or write cycle without the need for external components. The device contains a 128-byte page register to allow writing of up to 128 bytes simultaneously. During a write cycle, the address and 1 to 128 bytes of data are internally latched, freeing the address and data bus for other operations. Following the initiation of a write cycle, the device will automatically write the latched data using an internal control timer. The end of a write cycle can be detected by DATA polling of I/O7. Once the end of a write cycle has been detected a new access for a read or write can begin. Atmels AT28C010 has additional features to ensure high quality and manufacturabil- ity. The device utilizes internal error correction for extended endurance and improved data retention characteristics. An optional software data protection mechanism is available to guard against inadvertent writes. The device also includes an extra 128 bytes of EEPROM for device identification or tracking. 0353IPEEPR08/09AT28C010 2.2 32-lead PLCC Top View 2. Pin Configurations Pin Name Function A0 - A16 Addresses CE Chip Enable A7 5 29 A14 A6 6 28 A13 OE Output Enable A5 7 27 A8 Write Enable WE A4 8 26 A9 A3 9 25 A11 I/O0 - I/O7 Data Inputs/Outputs A2 10 24 OE NC No Connect A1 11 23 A10 DC Dont Connect A0 12 22 CE I/O0 13 21 I/O7 Note: PLCC package pin 1 is Dont Connect. 2.1 32-lead TSOP Top View A11 1 32 OE A9 2 31 A10 A8 3 30 CE A13 4 I/O7 29 A14 5 28 I/O6 NC 6 27 I/O5 WE 7 26 I/O4 VCC 8 25 I/O3 NC 9 24 GND A16 10 23 I/O2 A15 11 22 I/O1 A12 12 21 I/O0 A7 13 20 A0 A6 14 19 A1 A5 15 18 A2 A4 16 17 A3 2 0353IPEEPR08/09 I/O1 14 4 A12 I/O2 15 3 A15 GND 16 2 A16 I/O3 17 1 DC I/O4 18 32 VCC I/O5 19 31 WE I/O6 20 30 NC

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
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