DN2450 N-Channel, Depletion-Mode, Vertical DMOS FET Features Description High-input impedance This low threshold, depletion-mode, normally-on, tran- Low-input capacitance sistor utilizes an advanced vertical Diffusion Metal Fast switching speeds Oxide Semiconductor (DMOS) structure and a well proven silicon-gate manufacturing process. This com- Low on-resistance bination produces a device with the power-handling Free from secondary breakdown capabilities of bipolar transistors, plus the high-input Low input and output leakages impedance and positive-temperature coefficient inher- ent in Metal-Oxide Semiconductor (MOS) devices. Applications Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced second- Normally-on switches ary breakdown. Battery operated systems Voltage to current converters Vertical DMOS Field-Effect Transistors (FETs) are ide- Constant current sources ally suited to a wide range of switching and amplifying applications where a very low threshold voltage, high Current and voltage limiters breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. 2015 Microchip Technology Inc. DS20005404A-page 1DN2450 Package Type DRAIN DRAIN SOURCE DRAIN SOURCE GATE GATE TO-252 (D-PAK) TO-243AA (SOT-89) See Table 2-1 for pin information DS20005404A-page 2 2015 Microchip Technology Inc.