Product Information

JANTX1N3595-1T/R

JANTX1N3595-1T/R electronic component of Microchip

Datasheet
Diode Switching 0.2A 2-Pin DO-35 T/R

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3: USD 4.0205 ea
Line Total: USD 12.06

0 - Global Stock
MOQ: 3  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 3
Multiples : 1
3 : USD 4.0205
10 : USD 3.7994
25 : USD 3.7392
50 : USD 3.6789
100 : USD 3.6187
250 : USD 3.5573
500 : USD 3.4861

0 - WHS 2


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 3
Multiples : 3
3 : USD 8.7413
10 : USD 8.335
25 : USD 8.2795
50 : USD 8.2241
100 : USD 8.1685
250 : USD 8.1131
500 : USD 7.9509

0 - WHS 3


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 3
Multiples : 3
3 : USD 6.114
10 : USD 5.752

     
Manufacturer
Product Category
RoHS - XON
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Low Leakage Diode DO-35 Glass Package 1N3595 Applications Used in instrumentation applications, where low leakage and high voltage isolation are important. Features DO-35 Glass Package (nominal dimensions) Six sigma quality Metallurgically bonded glass 0.020 0.50 mm BKC s Sigma Bond plating for problem free solderability LL-34/35 MELF SMD available chip 1.0 Length Dia. 25.4 mm 0.145 0.070 Full approval to Mil-S-19500/241 (Min.) 3.7 mm 1.8 mm Available up to JANTXV-1 levels level screening available to Source Control Drawings using a DO-35 tungsten, hard glass voidless package for Space applications Maximum Ratings Symbol Value Unit Peak Inverse Voltage PIV 150 (Min.) Volts Average Rectified Current I 150 mAmps Avg Continuous Forward Current I 150 mAmps Fdc Peak Surge Current (t = 1 sec.) I 4.0 Amps peak peak o BKC Power Dissipation T =50 C, L= 3/8 from body P 500 mWatts L tot o Storage & Operating Temperature Range T -65 to +200 C St & Op o Electrical Characteristics 25 C Symbol Minimum Maximum Unit Forward Voltage Drop I = 1 mA V 0.52 0.68 Volts F F Forward Voltage Drop I = 5 mA V 0.60 0.75 Volts F F Forward Voltage Drop I = 10 mA V 0.65 0.80 Volts F F Forward Voltage Drop I = 50 mA V 0.74 0.88 Volts F F Forward Voltage Drop I = 100 mA V 0.79 0.92 Volts F F Forward Voltage Drop I = 200 mA V 0.83 1.0 Volts F F Reverse Leakage Current V = 125 V I 1.0 nA R R o Reverse Leakage Current V = 125 V I 500 150 C nA R R Capacitance V = 0 V, f = 1mHz C 8.0 pF R T Reverse Recovery Time (note 1) t 3.0 Secs rr Note 1: Per Method 4031-B of MIL-STD-750 with I = 10 mA, V = 35V, R = 1.0K Ohms, C = 10 Pf F R L For military parts use the 1N3595-1 number with the appropriate JAN, JTX or JTXV prefix. The SMD DO-213AA comes in commercial (LL3595) and military versions (1N3595UR-1). 6 Lake Street - Lawrence, MA 01841 Tel: 978-681-0392 - Fax: 978-681-91351N3595 Low-leakage Diode Reverse leakage vs Temp. Vr = 125 Volts 7 6 5 4 3 2 2 10 8 7 6 5 4 3 2 1 10 40 60 80 100 120 140 160 Tambient (Degrees C) DO-35 Power Derating Curve 500 400 300 200 100 0 0 20 40 60 80 100 120 140 160 180 200 Lead Temp. (Degrees C, 3/8 from body) 6 Lake Street - Lawrence, MA 01841 Tel: 978-681-0392 - Fax: 978-681-9135 Power (milliwatts) Ir (nanoAmperes) Typical Values

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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