X-On Electronics has gained recognition as a prominent supplier of JANTX1N6476US ESD SUPPRESSORS / TVS DIODES across the USA, India, Europe, Australia, and various other global locations. JANTX1N6476US ESD SUPPRESSORS / TVS DIODES are a product manufactured by Microchip. We provide cost-effective solutions for ESD SUPPRESSORS / TVS DIODES, ensuring timely deliveries around the world.

JANTX1N6476US Microchip

JANTX1N6476US electronic component of Microchip
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See Product Specifications
Part No.JANTX1N6476US
Manufacturer: Microchip
Category: ESD Suppressors / TVS Diodes
Description: Microsemi Uni-Directional TVS
Datasheet: JANTX1N6476US Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

100: USD 24.7172 ea
Line Total: USD 2471.72

Availability - 0
MOQ: 100  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 21 Jun to Thu. 27 Jun

MOQ : 100
Multiples : 1
100 : USD 24.7172
1000 : USD 23.254

0 - WHS 2


Ships to you between Thu. 27 Jun to Mon. 01 Jul

MOQ : 1
Multiples : 1
1 : USD 24.2783

   
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We are delighted to provide the JANTX1N6476US from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the JANTX1N6476US and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

1N6469US 1N6476US WWW.Microsemi .COM 1N6469US thru 1N6476US Voidless-Hermetically-Sealed Surface Mount Unidirectional Transient SCOTTSDALE DIVISION Suppressors DESCRIPTION APPEARANCE This surface mount series of industry recognized voidless-hermetically-sealed Unidirectional Transient Voltage Suppressor (TVS) designs is military qualified to MIL- PRF-19500/552 and are ideal for high-reliability applications where a failure cannot be tolerated. They provide a Working Peak Standoff Voltage selection from 5.0 to 51.6 Volts with 1500 W ratings. They are very robust in hard-glass construction and also use an internal metallurgical bond identified as Category I for high reliability applications. The 1500 W series is military qualified to MIL-PRF-19500/552. These devices are also available in axial-leaded packages for thru-hole mounting by deleting the US suffix (see separate data sheet for 1N6469 thru 1N6476A). Microsemi also offers numerous other TVS products to meet higher and lower peak pulse power and Package G voltage ratings in both through-hole and surface-mount packages. (or D-5C) IMPORTANT: For the most current data, consult MICROSEMIs website: 1N6469US 1N6476US WWW.Microsemi .COM 1N6469US thru 1N6476US Voidless-Hermetically-Sealed Surface Mount Unidirectional Transient SCOTTSDALE DIVISION Suppressors ELECTRICAL CHARACTERISTICS MAXIMUM MAXIMUM BREAKDOWN CLAMPING PEAK PULSE MAXIMUM BREAK WORKING MAX CURRENT VOLTAGE CURRENT TEMP. DOWN PEAK LEAKAGE TYPE I V COEF. OF VOLTAGE (BR) VOLTAGE CURRENT C I PP V(BR) V I 10/1000 s V (BR) WM D MIN. 8/20 s 10/1000 s o Volts mAdc Vdc V(pk) A(pk) A(pk) %/ C Adc 1N6469US 5.6 50 5 1500 9.0 945 167 -.03, +0.04 1N6470US 6.5 50 6 1000 11.0 775 137 0.06 1N6471US 13.6 10 12 20 22.6 374 66 0.085 1N6472US 16.4 10 15 10 26.5 322 57 0.085 1N6473US 27.0 5 24 5 41.4 207 36.5 .096 1N6474US 33.0 1 30.5 5 47.5 181 32 .098 1N6475US 43.7 1 40.3 5 63.5 135 24 .101 1N6476US 54.0 1 51.6 5 78.5 107 19 .103 SYMBOLS & DEFINITIONS Symbol Definition V Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current. BR Working Peak Voltage: The maximum peak voltage that can be applied over the operating temperature range. V WM This is also referred to as Standoff Voltage. I Maximum Standoff Current: The maximum current that will flow at the specified voltage and temperature. D V Maximum clamping voltage at specified I (Peak Pulse Current) at the specified pulse conditions. C PP Peak Pulse Power: The peak power dissipation resulting from the peak impulse current I . P PP PP GRAPHS Peak Value I PP Pulse time duration (tp) is defined as that point where I decays to 50% of peak P value (I ). PP time (t) in milliseconds FIG. 1 Non-repetive peak pulse power rating curve FIG. 2 Pulse wave form for exponential surge NOTE: Peak power defined as peak voltage times peak current for 10/1000 s Copyright 2007 Microsemi Page 2 10-03-2007 REV D Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Pulse current (I ) in percent of I P PP

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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