Product Information

LC30A

LC30A electronic component of Microchip

Datasheet
TVS Diodes - Transient Voltage Suppressors Transient Voltage Suppressor

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

Stock Image

LC30A
Microchip

1 : USD 27.1575
25 : USD 16.2945
100 : USD 13.0463
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1

Stock Image

LC30A
Microchip

1 : USD 48.9469
N/A

Obsolete
0 - WHS 3

MOQ : 1
Multiples : 1

Stock Image

LC30A
Microchip

1 : USD 27.1575
25 : USD 16.2945
100 : USD 13.0463
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product Type
Termination Style
Package / Case
Diameter
Length
Brand
Mounting Style
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
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LC6.5 LC170A Screening in 1500 Watt Low Capacitance reference to Available Transient Voltage Suppressor MIL-PRF-19500 available DESCRIPTION This hermetically sealed Transient Voltage Suppressor (TVS) product family includes a rectifier diode element in series and in the opposite direction. This allows it to present a very low (< 100 pF) capacitance to the system it is protecting (see Figure 2). The low capacitance of these devices makes them particularly useful for protecting lines carrying high frequency signals. They are also useful in protecting from the secondary effects of lightning in airborne avionics per IEC61000-4-5, RTCA/DO-160G, and ARINC 429. If bidirectional transient capability is required, two of these low capacitance TVS devices may be used in parallel in opposite directions (anti-parallel) for complete ac protection as shown in Figure 4. Important: For the latest information, visit our website LC6.5 LC170A MAXIMUM RATINGS Parameters/Test Conditions Symbol Value Unit Junction and Storage Temperature T and T -65 to +175 C J STG Thermal Resistance, Junction to Lead 0.375 inch R 50 C/W JL (10 mm) from body (1) Thermal Resistance, Junction to Ambient R 110 C/W JA (2) Peak Pulse Power T = +25 C P 1500 W L PP (3) Power Dissipation T +125 C P 1 W L D o Solder Temperature 10 s T 260 C SP 2 Notes: 1. When mounted on FR4 PC board with 4 mm copper pads (1 oz) and track width 1 mm, length 25 mm. 2. At 10/1000 s with repetition rate of 0.01% or less (see Figure 1). 3. At 3/8 inch (10 mm) from body. TVS devices are not typically used for dc power dissipation and are instead operated at or less than their rated standoff voltage (V ) except for transients that briefly drive the device into avalanche breakdown (V to V region). Also see WM BR C Figures 2, 3 and 4 for further protection details in rated peak pulse power for unidirectional and bidirectional configurations respectively. MECHANICAL and PACKAGING CASE: Welded, hermetically sealed metal and glass. TERMINALS: Tin-lead plated or RoHS compliant annealed matte-tin plating. Solderable per MIL-STD-750 method 2026. MARKING: Part number and polarity diode symbol. POLARITY: Cathode connected to case and polarity indicated by diode symbol. TAPE & REEL option: Standard per EIA-296 (add TR suffix to part number). Consult factory for quantities. WEIGHT: Approximately 1.4 grams. See Package Dimensions on last page. PART NOMENCLATURE MQ LC 6.5 A (e3) Reliability Level RoHS Compliance MQ (reference JAN) e3 = RoHS compliant MX (reference JANTX) Blank = non-RoHS compliant MV (reference JANTXV) MSP (reference JANS) Tolerance Level Blank = Commercial A = +/- 5 % blank = +/- 10 % Low Capacitance Reverse Standoff Voltage (V ) WM (See Electrical Characteristics table) SYMBOLS & DEFINITIONS Symbol Definition I Breakdown Current: The current used for measuring breakdown voltage V . (BR) (BR) o V Breakdown Voltage: This is the breakdown voltage the device will exhibit at 25 C. (BR) V Rated Working Standoff Voltage: The maximum peak voltage that can be applied over the operating temperature range. WM Maximum Clamping Voltage: The maximum peak voltage appearing across the TVS when subjected to the peak pulse current in a one millisecond time interval. The peak pulse voltage is the combination of voltage rise due to both the V C series resistance and thermal rise and positive temperature coefficient ( ). V(BR) I Peak Impulse Current: The peak current during the impulse. PP P Peak Pulse Power: The pulse power as determined by the product of V and I . PP C PP I Standby Current: The current at the standoff voltage V . D WM T4-LDS-0293, Rev. 1 (5/6/13) 2013 Microsemi Corporation Page 2 of 6

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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