LND01K1-G

LND01 Lateral N-Channel Depletion-Mode MOSFET Features General Description Bi-directional The LND01 is a low-threshold, Depletion-mode (normally-on) transistor that uses an advanced lateral Low On-resistance DMOS structure and a well-proven silicon gate Low Input Capacitance manufacturing process. This combination produces a Fast Switching Speeds device with the power handling capabilities of bipolar High Input Impedance and High Gain transistors as well as the high input impedance and Low Power Drive Requirement positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this Ease of Paralleling device is free from thermal runaway and thermally induced secondary breakdown. Applications The body of the transistor is connected to the gate pin. Normally-on Switches The channel is therefore being pinched off by both the Solid-state Relays gate and body. The gate pin has a diode connected to Converters the drain terminal and another diode connected to the source terminal. Constant Current Sources Analog Switches Package Type 5-lead SOT-23 DRAIN SOURCE N/C GATE N/C See Table 2-1 for pin information. 2017 Microchip Technology Inc. DS20005696A-page 1LND01 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings Drain-to-source Voltage ....................................................................................................................................... BV DSX Source-to-drain Voltage........................................................................................................................................ BV SDX Gate-to-source Voltage ............................................................................................................................ 12V to +0.6V Gate-to-drain Voltage ............................................................................................................................... 12V to +0.6V ................................................................................................... 25C to +125C Operating Ambient Temperature, T A Notice: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. DC ELECTRICAL CHARACTERISTICS Electrical Specifications: T = 25C unless otherwise specified. (Note 1) A Parameter Sym. Min. Typ. Max. Unit Conditions 9 V V = 3V, I = 10 A Drain-to-source Breakdown Voltage BV DSX GS DS Source-to-drain Breakdown Voltage BV 9 V V = 3V, I = 10 A SDX GD SD Gate-to-source Off Voltage V 0.8 3 V V = 9V, I = 1 A GS(OFF) DS DS 0.8 3 V V = 9V, I = 1 A Source-to-gate Off Voltage V SG(OFF) SD SD Gate-to-source Diode V 12 0.6 V I = 1 A GS GS Gate-to-drain Diode V 12 0.6 V I = 1 A GD GD 1 A V = 3V, V = 9V Drain-to-source Leakage Current I DS(OFF) GS DS Source-to-drain Leakage Current I 1 A V = 3V, V = 9V SD(OFF) GD SD Saturated Drain-to-source Current I 300 mA V = 0V, V = 9V DSS GS DS 300 mA V = 0V, V = 9V Saturated Source-to-drain Current I SDD GD SD Static Drain-to-source On-state R 0.9 1.4 V = 0V, I = 100 mA DS(ON) GS DS ance Resist Static Source-to-drain On-state R 0.9 1.4 V = 0V, I = 100 mA SD(ON) GD SD ance Resist Note 1: All DC parameters are 100% tested at 25C unless otherwise stated. (Pulse test: 300 s pulse, 2% duty cycle) 2: Specification is obtained by characterization and is not 100% tested. AC ELECTRICAL CHARACTERISTICS Electrical Specifications: T = 25C unless otherwise specified. (Note 2) A Parameter Sym. Min. Typ. Max. Unit Conditions Forward Transconductance G 200 mmho V = 9V, I = 50 mA FS DS DS Input Capacitance C 46 pF ISS V = 3V, V = 5V, GS DS 32 pF Common Source Output Capacitance C OSS f = 1 MHz Reverse Transfer Capacitance C 23 pF RSS Turn-on Delay Time t 3.8 ns d(ON) 11 ns Rise Time t V = 9V, I = 100 mA, r DD DS R = 25 Turn-off Delay Time t 1 ns GEN d(OFF) Fall Time t 6.4 ns f Note 1: All DC parameters are 100% tested at 25C unless otherwise stated. (Pulse test: 300 s pulse, 2% duty cycle) pecification is obtained by characterization and is not 100% tested. 2: S DS20005696A-page 2 2017 Microchip Technology Inc.