Supertex inc. LND250
N-Channel Depletion-Mode
DMOS FET
Features General Description
Free from secondary breakdown The LND250 is a high voltage N-channel depletion mode
(normally-on) transistor utilizing Supertexs lateral DMOS
Low power drive requirement
technology. The gate is ESD protected.
Ease of paralleling
Excellent thermal stability
The LND250 is ideal for high voltage applications in the
Integral source-drain diode
areas of normally-on switches, precision constant current
High input impedance and low C
ISS sources, voltage ramp generation and amplification.
ESD gate protection
Applications
Solid state relays
Normally-on switches
Converters
Power supply circuits
Constant current sources
Input protection circuits
Ordering Information Product Summary
R I
BV /BV
Part Number Package Options Packing
DS(ON) DSS
DSX DGX
(V)
(max) (min)
LND250K1-G* TO-236AB (SOT-23) 3000/Reel
500 1.0k 1.0mA
-G denotes a lead (Pb)-free / RoHS compliant package
* Part is not recommended for new designs. Please refer to LND150K1-G.
Pin Configuration
Absolute Maximum Ratings
Parameter Value
SOURCE
Drain-to-source BV
DSX
Drain-to-gate BV
DGX
DRAIN
Gate-to-source 20V
O O
Operating and storage temperature -55 C to +150 C GATE
Absolute Maximum Ratings are those values beyond which damage to the device may
TO-236AB (SOT-23)
occur. Functional operation under these conditions is not implied. Continuous operation
of the device at the absolute rating level may affect device reliability. All voltages are
referenced to device ground.
Product Marking
W = Code for Week Sealed
NDEW
= Green Packaging
TO-236AB (SOT-23)
Packages may or may not include the following marks: Si or
Doc.# DSFP-LND250
Supertex inc.
B012314
www.supertex.comLND250
Thermal Characteristics
I I Power Dissipation
D D
I I
ja DR DRM
O
Package
(continuous) (pulsed) @T = 25 C
A O
( C/W) (mA) (mA)
(mA) (mA) (W)
TO-236AB (SOT-23) 13 30 0.36 203 13 30
Notes:
I (continuous) is limited by max rated T.
D j
O
Electrical Characteristics (T = 25 C unless otherwise specified)
A
Sym Parameter Min Typ Max Units Conditions
BV Drain-to-source breakdown voltage 500 - - V V = -10V, I = 1.0mA
DSX GS D
V Gate-to-source off voltage -1.0 - -3.0 V V = 25V, I = 100nA
GS(OFF) GS D
O
V Change in V with temperature - - 5.0 mV/ C V = 25V, I = 100nA
GS(OFF) GS(OFF) GS D
I Gate body leakage current - - 100 nA V = 20V, V = 0V
GSS GS DS
- - 100 nA V = -10V, V = 450V
GS DS
I Drain-to-source leakage current
V = 0.8V Max Rating,
D(OFF)
DS
- - 100 A
O
V = -10V, T = 125 C
GS A
I Saturated drain-to-source current 1.0 - 3.0 mA V = 0V, V = 25V
DSS GS DS
R Static drain-to-source on-state resistance - 850 1000 V = 0V, I = 0.5mA
DS(ON) GS D
O
R Change in R with temperature - - 1.2 %/ C V = 0V, I = 0.5mA
DS(ON) DS(ON) GS D
G Forward transductance 1.0 2.0 - mmho V = 0V, I = 1.0mA
FS DS D
C Input capacitance - 7.5 10
ISS
V = -10V,
GS
C Common source output capacitance - 2.0 3.5 pF V = 25V,
OSS DS
f = 1.0MHz
C Reverse transfer capacitance - 0.5 1.0
RSS
t Turn-on delay time - 0.09 -
d(ON)
V = 25V,
t Rise time - 0.45 - DD
r
s I = 1.0mA,
D
t Turn-off delay time - 0.1 -
d(OFF) R = 25
GEN
t Fall time - 1.3 -
f
V Diode forward voltage drop - - 0.9 V V = -10V, I = 1.0mA
SD GS SD
t Reverse recovery time - 200 - ns V = -10V, I = 1.0mA
rr GS SD
Notes:
O
1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
0V
VDD
90%
INPUT
Pulse
R
L
10% Generator
-10V OUTPUT
t t
(ON) (OFF)
R
GEN
t t
t t
d(ON) r d(OFF) f
VDD INPUT
D.U.T.
10%
10%
OUTPUT
90% 90%
0V
Doc.# DSFP-LND250
Supertex inc.
B012314
2 www.supertex.com