Product Information

MMA021AA

MMA021AA electronic component of Microchip

Datasheet
RF Amplifier 5-20GHz MMIC Amplifier w/Int Bias

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 80.8 ea
Line Total: USD 80.8

22 - Global Stock
Ships to you between
Fri. 03 May to Thu. 09 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
22 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1
Multiples : 1

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MMA021AA
Microchip

1 : USD 80.8
5 : USD 73.9375
10 : USD 70.9125
25 : USD 66.375
50 : USD 65.3875
100 : USD 64.4
250 : USD 63.4375

     
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MMA021AA 5 - 20GHz MMIC Amplifier with Integrated Bias Description Features The MMA021AA is a two-stage PHEMT high Excellent performance 5-18GHz: gain amplifier designed to be insensitive to High, flat gain (15 0.5dB) process or temperature changes. Its high Good return loss (15dB) isolation makes it ideal for applications requir- 17.5dBm P1dB, 20dBm Psat ing both gain and isolation. The device can Mixed-signal 3.3V operation: be operated at 5V 135mA, or 3.3V 108mA for Similar small-signal integration with mixed-signal circuitry. performance Good power (16.5dBm Psat) Quick and easy to use: Application The MMA021AA MMIC Amplifier with Self-biasing (5V or 3.3V supply) Integrated Bias is designed for digital radio, Integrated blocking capacitors spread spectrum, electronic warfare, and Very high isolation (-36dB) broadband communication systems. It can be 100% DC, RF, and visually tested used as a LO or mixer isolation amplifier, a Size: 920x920um (36.2x36.2mil) transmit amplifier in a radio system, or as a Typically self-biased for low-cost general isolation and gain block amplifier. Class-A operation Requires only a single 5V supply Both drain and both gate pads are available for higher-efficiency operation The device is AC coupled with integrated blocking capacitors Key Characteristics: Vdd1 = Vdd2 = 5.0V, Vg1 = Vg2 = N/C, Idd1 = 65mA, Idd2 = 90mA, Zo=50 Specifications pertain to wafer measurements with RF probes and DC bias cards 25C 5 - 18GHz 4.5 - 20GHz Parameter Description Min Typ Max Min Typ Max S21 (dB) Small Signal Gain 14 15 - 12.5 14.5 - Flatness (dB) Gain Flatness - 0.5 0.8 - 1.0 2.0 S11 (dB) Input Match - -15 -13 - -15 -13 S22 (dB) Output Match - -17 -11.5 - -17 -12 S12 (dB) Reverse Isolation - -36 -32 - -36 -32 P1dB (dBm) 1dB Compressed Output Power 17 18 - - 18 - Psat (dBm) Saturated Output Power 19 20 - 18.5 20 - NF (dB) Noise Figure - 7 - - 7.5 - SMD-00160 Rev C 1 of 5 Subject to Change Without Notice MMA021AA S21 Noise Figure Typical IC performance measured on-wafer Typical IC performance with package de-embedded S11, S22 S12 Typical IC performance measured on-wafer Typical IC performance measured on-wafer Output Power Group Delay Typical IC performance measured on-wafer Typical IC performance measured on-wafer SMD-00160 Rev C 2 of 5 Subject to Change Without Notice

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
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