MMA031AA

MMA031AA DC to 45 GHz MMIC Amplifier Description Features The MMA031AA is an eight stage medium 22 dBm Psat (8.5V p-p) power broadband Traveling Wave Amplifier. Dynamic Gain Control The amplifier has been designed for excellent 10 dB Gain return loss and flat gain to 45 GHz. By using Low Noise Figure (5 dB) external components the bandwidth of Flatness 1dB to 40 GHz operation can be extended to frequencies >18 dBm Pout @ >7 dB Gain below 100 kHz. A bonding pad is provided @ 45 GHz for dynamic gain control. Size: 1640 x 835 m ECCN 3A001.b.2.d Application The MMA031AA MMIC Amplifier is designed for broadband applications in communications, test equipment and military systems. The amplifier can be used as a gain block featuring 10 dB of gain to 45 GHz. Key Characteristics: Vdd=8.0V, Idd=250 mA, Zo=50 Specifications pertain to wafer measurements with RF probes and DC bias cards @ 25C 40MHz - 40GHz 40MHz - 45GHz Parameter Description Min Typ Max Min Typ Max S21 (dB) Small Signal Gain 9 10.5 - 9 10 - Flatness (dB) Gain Flatness - 1.0 1.5 - 1.0 1.5 S11 (dB) Input Match - -14 -11 - -13 -10 S22 (dB) Output Match - -15 - -12 -12 -9 S12 (dB) Reverse Isolation - -26 -23 - -26 -22 P1dB (dBm) 1dB Compressed Output Power - 16.5 - 15.5 - - Psat (dBm) Saturated Output Power - 22 - 21 - - Pdc (W) DC Power Dissipated - 2.0 - - 2.0 - Pout @7dB (dBm) Output Power @ 7dB Gain - - 18 21 - - NF (dB) Noise Figure - 5.0 - - 9 - SMD-00179 Rev C 1 of 5 Subject to Change Without Notice MMA031AA Supplemental Specifications S21 Group Delay Typical on wafer measured performance. Bias: Vd=8V; Id=250 mA Typical on wafer measured performance. Bias: Vd=8V; Id=250 mA S11 S22 Typical on wafer measured performance. Bias: Vd=8V; Id=250 mA Typical on wafer measured performance. Bias: Vd=8V; Id=250 mA Power Measurement Noise Figure Typical on wafer measured performance. Bias: Vd=8V; Id=250 mA Typical IC performance with package de-embedded Bias: Vd=8V; Id=250 mA SMD-00179 Rev C 2 of 5 Subject to Change Without Notice