Product Information

MS2213

MS2213 electronic component of Microchip

Datasheet
Trans RF BJT NPN 3.5A 4-Pin Case M214

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 301.5253 ea
Line Total: USD 301.53

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 1
Multiples : 1

Stock Image

MS2213
Microchip

1 : USD 301.5253

     
Manufacturer
Product Category
Transistor Polarity
Operating Frequency
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
Mounting Style
Collector- Base Voltage Vcbo
Operating Temp Range
Pin Count
Number Of Elements
Operating Temperature Classification
Category
Rad Hardened
LoadingGif

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140 COMMERCE DRIVE MONTGOMERYVILLE, PA - PHONE: (215) 631 - FAX: (215) 631 - MS2213 RS 960 - :: 960 - This device operates over a . AABSOLUTE MAXIMUM RATINGS BSOLUTE MAXIMUM RATINGS V Collector - Supply Voltage V CC I A C P Power Dissipation W DISS T Junction Temperature (RF Pulsed Operation) C J T - C STG Thermal DataThermal Data R Junction - TH(J - C) or contact our factory direct. WWW.ADVANCEDPOWER.COM Visit our website at Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein C/W 2.2 case Thermal Resistance 65 to +200 Storage Temperature +250 75 3.5 Device Current 40 Unit Value Parameter Symbol C) (Tcase = 25 can withstand a 15:1 VSWR mismatch under load wide range of pulse widths, duty cycles and temperatures, and operation. under Class C amplifier Gold metallization and emitter ballasting assure high reliability 1215 MHz. for JTIDS pulsed power applications from The MS2213 is a silicon NPN bipolar device specifically designed DESCRIPTION POUT = 30 W MIN. WITH 7.8 dB GAIN CLASS C OPERATION HERMETIC PACKAGE GOLD METALLIZATION COMMON BASE 1215 MHz Features AVIONICS/JTIDS APPLICATIONS RF & MICROWAVE TRANSISTO 9855 9840 1013 18936 MS2213 ELECTRICAL SPECIFICATIONS (Tcase = 25ELECTRICAL SPECIFICATIONS (Tcase = 25C)C) STATICSTATIC Test C onditions Typ. I --- --- V CBO C I --- --- V EBO --- --- V I R CER C BE I V = 35 V ------ --- CES CB h V = 5 V I --- --- FE CE C DYNAMICDYNAMIC Test Conditi ons Typ. P f = 960 - V = 35V P --- --- W OUT CC IN G f = 960 - V = 35V P --- --- dB P CC IN f = 960 - 1215 MHz V =35V P --- % C CC IN Pulse format: 6.4 us on 6.6 us off, repeat for 3.3ms, then off for 4.5125 ms. Duty Cycle: Burst 49.2%, overall 20.8%. IMPEDANCE DATAIMPEDANCE DATA Freq. (MHz) Z ( ) Z ( ) IN OUT 4.5 + j 6.0 11.0 + j 0.5 5.5 + j 6.3 j 2.0 5.0 + j 5.0 j 5.0 or contact our factory direct. WWW.ADVANCEDPOWER.COM Visit our website at Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein 12.5 1215 12.0 1090 960 40 =5.0W 7.8 =5.0W 1215 MHz 30 =5.0W 1215 MHz Max. Min. Unit Symbol Value 150 15 = 1A mA 5.0 =10 = 20mA 55 BV E 3.5 = 1mA BV 55 = 10mA BV Max. Min. Unit Symbol Value

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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