MRF10005 Microwave Power Silicon Bipolar Transistor Rev. V1 5.0 W, 9601215 MHz, 28V Features Product Image Guaranteed performance 1.215GHz, 28Vdc Output power: 5.0W CW Minimum gain = 8.5dB, 10.3dB (Typ.) RF performance curves for 28 Vdc and 36 Vdc opera- tion 100% tested for load mismatch at all phase angles with 10:1 VSWR Hermetically sealed industry standard package Silicon nitride passivated Gold metallized, emitter ballasted for long life and re- sistance to metal migration Internal input matching for broadband operation Description and Applications Designed for CW and long-pulsed common base amplifier applications, such as JTIDS and Mode S, in the 0.96 to CASE 336E 02, STYLE 1 1.215 GHz frequency range with high overall duty cycles. Maximum Ratings Symbol Value 11 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MRF10005 Microwave Power Silicon Bipolar Transistor Rev. V1 5.0 W, 9601215 MHz, 28V 22 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: