Product Information

MSC080SMA120J

MSC080SMA120J electronic component of Microchip

Datasheet
Discrete Semiconductor Modules MOSFET-SIC
Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 29.969 ea
Line Total: USD 29.97

29 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

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44 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

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MSC080SMA120J
Microchip

1 : USD 30.9204
30 : USD 28.8203
100 : USD 26.6015

Read More Specifications

     
Manufacturer
Product Category
Product
Vgs - Gate-Source Voltage
Mounting Style
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Technology
Hts Code
LoadingGif

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Additional Infomation About Product

MSC080SMA120J Silicon Carbide N-Channel Power MOSFET Product Overview The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC080SMA120J device is a 1200 V, 80 m SiC MOSFET in an SOT-227 package. Features The following are key features of the MSC080SMA120J device: Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, T = 175 C J(max) Fast and reliable body diode Superior avalanche ruggedness RoHS compliant Isolated voltage to 2500 V Benefits The following are benefits of the MSC080SMA120J device: High efficiency to enable lighter, more compact system Simple to drive and easy to parallel Improved thermal capabilities and lower switching losses Eliminates the need for external freewheeling diode Lower system cost of ownership Applications The MSC080SMA120J device is designed for the following applications: PV inverter, converter, and industrial motor drives Smart grid transmission and distribution Induction heating and welding H/EV powertrain and EV charger Power supply and distribution Datasheet DS-00004138A-page 1 2021 Microchip Technology Inc. and its subsidiaries MSC080SMA120J Device Specifications 1. Device Specifications This section shows the specifications of the MSC080SMA120J device. 1.1 Absolute Maximum Ratings The following table shows the absolute maximum ratings of the MSC080SMA120J device. Table 1-1.Absolute Maximum Ratings Symbol Parameter Ratings Unit V Drain source voltage 1200 V DSS I Continuous drain current at T = 25 C 31 A D C Continuous drain current at T = 100 C 22 C 1 I Pulsed drain current 77 DM V Gate-source voltage 23 to 10 V GS P Total power dissipation at T = 25 C 143 W D C Linear derating factor 0.95 W/C Note: 1. Repetitive rating: pulse width and case temperature limited by maximum junction temperature. The following table shows the thermal and mechanical characteristics of the MSC080SMA120J device. Table 1-2.Thermal and Mechanical Characteristics Symbol Characteristic/Test Conditions Min Typ Max Unit R Junction-to-case thermal resistance 0.70 1.05 C/W JC T Operating junction temperature 55 175 C J T Storage temperature 55 150 STG T Soldering temperature for 10 seconds (1.6 mm from 300 L case) V RMS voltage (50 Hz60 Hz sinusoidal waveform from 2500 V ISOLATION terminals to mounting base for 1 minute) Mounting torque, M4 screw 10 lbf-in 1.1 N-m Wt Package weight 1.03 oz 29.2 g 1.2 Electrical Performance The following table shows the static characteristics of the MSC080SMA120J device. T = 25 C unless otherwise J specified. DS-00004138A-page 2 Datasheet 2021 Microchip Technology Inc. and its subsidiaries

HS Compliance

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free

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