SD1224-02 Microchip

SD1224-02 RF AND MICROWAVE TRANSISTORS VHF FM APPLICATIONS Features 175 MHz 28 VOLTS CLASS C COMMON EMITTER EFFICIENCY 60% MIN. P = 40 W MIN. OUT G = 7.6 dB GAIN P DESCRIPTION: The SD1224-02 is an epitaxial silicon NPN planar transistor designed primarily for 28 V FM Class C RF amplifiers utilized in ground station transmitters. This device utilizes ballasted emitter resistors and improved metallization systems to achieve optimum load mismatch capability. ABSOLUTE MAXIMUM RATINGS (Tcase = 25C) Symbol Parameter Value Unit V Collector-Base Voltage 65 V CBO V Collector-Emitter Voltage 35 V CEO V Collector-Emitter Voltage 65 V CES V Emitter-Base Voltage 4.0 V EBO I Device Current 5.0 A C P Power Dissipation 60 W DISS T Junction Temperature +200 C J T Storage Temperature -65 to +150 C STG Thermal Data R Junction-Case Thermal Resistance 2.9 C/W TH(j-c) Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. SD1224-02 ELECTRICAL SPECIFICATIONS (Tcase = 25 C) STATIC Value Symbol Test Conditions Units Min. Typ. Max. BV I = 200 mA I = 0 mA 65 V CBO C B BV I = 200 mA V = 0 V 65 V CES C BE BV I = 100 mA I = 0 mA 35 V CEO C B BV I = 10 mA I = 0 mA 4.0 V EBO E C V = 30 V I = 0 mA 1 mA I CB E CBO h V = 5 V I = 500 mA 20 200 FE CE C DYNAMIC Value Symbol Test Conditions Units Min. Typ. Max. P f = 175 MHz P = 7.0 W V = 28 V 40 W OUT IN CE f = 175 MHz P = 7.0 W V = 28 V 60 % C IN CE G f = 175 MHz P = 7.0 W V = 28 V 7.6 dB P IN CE C f = 1 MHz V = 30 V 65 pF OB CB Revision A, October 2009 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct.