Product Information

SMBG130A

SMBG130A electronic component of Microchip

Datasheet
Diode TVS Single Uni-Dir 130V 600W Automotive 2-Pin DO-215AA

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

16: USD 0.1121 ea
Line Total: USD 1.79

0 - Global Stock
MOQ: 16  Multiples: 16
Pack Size: 16
Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 13 May to Fri. 17 May

MOQ : 16
Multiples : 16

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SMBG130A
Microchip

16 : USD 0.1121

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Polarity
Breakdown Voltage
Clamping Voltage
Brand
Leakage Current Max
Mounting
Operating Temp Range
Package Type
Pin Count
Number Of Elements
Operating Temperature Classification
Peak Pulse Power Dissipation
Peak Pulse Current
Reverse Stand-Off Voltage
Test Current It
Rad Hardened
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SMBJ5.0 thru SMBJ170CA Transient Voltage Suppressor Breakdown Voltage 5.0 to 170 Volts Peak Pulse Power 600 Watts Features Breakdown Voltages (V ) from 5.0 to 170V BR 600W peak pulse power capability with a 10/1000s CASE: SMB (DO214AA) waveform, repetitive rate (duty cycle):0.01% Fast Response Time Low incremental surge resistance Excellent clamping capability Available in uni-directional and bi-directional High temperature soldering guaranteed: 265 /10 seconds, 0.375 (9.5mm) lead length, 5lbs. (2.3kg) tension Application Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on IC , MOSFE, signal lines of sensor units for S consumer, computer, industrial, automotive and telecommunication Mechanical Data Case: Void-free transfer molded thermosetting epoxy body meeting UL94V-O Terminals: Tin-Lead or ROHS Compliant annealed matte-Tin plating readily solderable per MIL-STD-750, Method 2026 Marking: Body marked with part number Polarity: Cathode indicated by band. No marking on bi- directional devices Dimensions in inches and (millimeters) Weight: 0.093gApproximately O Maximum Ratings and Electrical Characteristics 25 C unless otherwise specified Symbol Conditions Value Unit P Peak pulse power capability with a 10/1000s 600 W PPM I Peak pulse current with a 10/1000s SEE TABLE1 A PPM Steady state power dissipation at T =25 ,Lead lengths 0.375(10mm) 5.0 W L P M(AV) Steady state power dissipation at T =25 when mounted on FR4 PC A 1.38 W described for thermal resistance I Peak forward surge current,8.3ms single half sine-wave unidirectional only 100 A FSM V Maximum instantaneous forward voltage at 30A for unidirectional only 3.5 V F R Thermal resistance junction to lead 25 /W JL R Thermal resistance junction to ambient 90 /W JA T T Operating and Storage Temperature -65 to +150 J, STG Notes: Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle=4 pulses per minute maximum Document Number: SMBJ5.0 thru SMBJ170CA www.smsemi.com Feb.29, 2012 1 SMBJ5.0 thru SMBJ170CA Electrical Characteristics 25C (Unless Otherwise Noted) TABLE1 Maximum Breakdown Reverse Maximum Maximum Voltage Standby Stand Peak Clamping Microsemi V I BR BR Off Pulse Voltage Part current Voltage Current V I Number C PP I V D WM MIN MAX V (V) I (mA) V (V) I (A) I (A) V (V) BR BR WM D PP C SMBJ5.0 6.40 7.30 10 5.0 800 62.5 9.6 SMBJ5.0A 6.40 7.00 10 5.0 800 65.2 9.2 SMBJ6.0 6.67 8.15 10 6.0 800 52.6 11.4 SMBJ6.0A 6.67 7.37 10 6.0 800 58.3 10.3 SMBJ6.5 7.22 8.82 10 6.5 500 48.7 12.3 SMBJ6.5A 7.22 7.98 10 6.5 500 53.6 11.2 SMBJ7.0 7.78 9.51 10 7.0 200 45.1 13.3 SMBJ7.0A 7.78 8.60 10 7.0 200 50.0 12.0 SMBJ7.5 8.33 10.2 1 7.5 100 42.0 14.3 SMBJ7.5A 8.33 9.21 1 7.5 100 46.5 12.9 SMBJ8.0 8.89 10.9 1 8.0 50 40.0 15.0 SMBJ8.0A 8.89 9.83 1 8.0 50 44.1 13.6 SMBJ8.5 9.44 11.5 1 8.5 10 37.7 15.9 SMBJ8.5A 9.44 10.4 1 8.5 10 41.7 14.4 SMBJ9.0 10.0 12.2 1 9.0 5 35.5 16.9 SMBJ9.0A 10.0 11.1 1 9.0 5 39.0 15.4 SMBJ10 11.1 13.6 1 10.0 5 31.9 18.8 SMBJ10A 11.1 12.3 1 10.0 5 35.3 17.0 SMBJ11 12.2 14.9 1 11.0 5 29.9 20.1 SMBJ11A 12.2 13.5 1 11.0 5 33.0 18.2 SMBJ12 13.3 16.3 1 12.0 5 27.3 22.0 SMBJ12A 13.3 14.7 1 12.0 5 30.2 19.9 SMBJ13 14.4 17.6 1 13.0 1 25.2 23.8 SMBJ13A 14.4 15.9 1 13.0 1 27.9 21.5 SMBJ14 15.6 19.1 1 14.0 1 23.3 25.8 SMBJ14A 15.6 17.2 1 14.0 1 25.8 23.2 SMBJ15 16.7 20.4 1 15.0 1 22.3 26.9 SMBJ15A 16.7 18.5 1 15.0 1 24.0 24.4 SMBJ16 17.8 21.8 1 16.0 1 20.8 28.8 SMBJ16A 17.8 19.7 1 16.0 1 23.1 26.0 SMBJ17 18.9 23.1 1 17.0 1 19.7 30.5 SMBJ17A 18.9 20.9 1 17.0 1 21.7 27.6 SMBJ18 20.0 24.4 1 18.0 1 18.6 32.2 SMBJ18A 20.0 22.1 1 18.0 1 20.5 29.2 SMBJ20 22.2 27.1 1 20.0 1 16.7 35.8 SMBJ20A 22.2 24.5 1 20.0 1 18.5 32.4 SMBJ22 24.4 29.8 1 22.0 1 15.2 39.4 SMBJ22A 24.4 26.9 1 22.0 1 16.9 35.5 SMBJ24 26.7 32.6 1 24.0 1 14.0 43.0 SMBJ24A 26.7 29.5 1 24.0 1 15.4 38.9 SMBJ26 28.9 35.3 1 26.0 1 12.4 46.6 SMBJ26A 28.9 31.9 1 26.0 1 14.2 42.1 SMBJ28 31.1 38.0 1 28.0 1 12.0 50.0 SMBJ28A 31.1 34.4 1 28.0 1 13.2 45.4 SMBJ30 33.3 40.7 1 30.0 1 11.2 53.5 SMBJ30A 33.3 36.8 1 30.0 1 12.4 48.4 SMBJ33 36.7 44.9 1 33.0 1 10.2 59.0 SMBJ33A 36.7 40.6 1 33.0 1 11.3 53.3 SMBJ36 40.0 48.9 1 36.0 1 9.3 64.3 SMBJ36A 40.0 44.2 1 36.0 1 10.3 58.1 SMBJ40 44.4 54.3 1 40.0 1 8.4 71.4 SMBJ40A 44.4 49.1 1 40.0 1 9.3 64.5 Document Number: SMBJ5.0 thru SMBJ170CA www.smsemi.com Feb.29, 2012 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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