Product Information

SST25VF040B-50-4C-SAF

SST25VF040B-50-4C-SAF electronic component of Microchip

Datasheet
Flash FLASH MEMORY 4M (512Kx8) 50MHz

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

100: USD 1.2875 ea
Line Total: USD 128.75

1424 - Global Stock
Ships to you between
Fri. 05 Apr to Thu. 11 Apr
MOQ: 100  Multiples: 100
Pack Size: 100
Availability Price Quantity
1424 - Global Stock


Ships to you between Fri. 05 Apr to Thu. 11 Apr

MOQ : 100
Multiples : 100
100 : USD 1.2875
300 : USD 1.2325
500 : USD 1.2138
1000 : USD 1.1663
2500 : USD 1.1063
5000 : USD 1.09
7500 : USD 1.0738
10000 : USD 1.0575

2649 - Global Stock


Ships to you between Thu. 11 Apr to Mon. 15 Apr

MOQ : 1
Multiples : 1
1 : USD 1.173
25 : USD 1.15
100 : USD 1.1121

1358 - Global Stock


Ships to you between Fri. 05 Apr to Thu. 11 Apr

MOQ : 100
Multiples : 100
100 : USD 1.4632
300 : USD 1.434

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Series
Memory Size
Maximum Clock Frequency
Interface Type
Organisation
Timing Type
Data Bus Width
Supply Voltage - Min
Supply Voltage - Max
Supply Current - Max
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Architecture
Speed
Memory Type
Operating Temperature
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Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
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SST25VF040B 4-Mbit SPI Serial Flash Features Packages Single Voltage Read and Write Operations: 8-lead SOIC (208 mils), 8-lead SOIC (150 mils) and 8-contact WSON (6 mm x 5 mm) - 2.7V-3.6V Serial Interface Architecture: Description - SPI Compatible: Mode 0 and Mode 3 High-Speed Clock Frequency: The 25 series Serial Flash family features a four-wire, SPI-compatible interface that allows for a low pin-count - Up to 50 MHz package which occupies less board space and ulti- Superior Reliability: mately lowers total system costs. The SST25VF040B - Endurance: 100,000 Cycles (typical) devices are enhanced with improved operating fre- - Greater than 100 years Data Retention quency and even lower power consumption. Low-Power Consumption: SST25VF040B SPI serial Flash memories are manu- - Active Read Current: 10 mA (typical) factured with proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and - Standby Current: 5 A (typical) thick-oxide tunneling injector attain better reliability and Flexible Erase Capability: manufacturability compared with alternate approaches. - Uniform 4-Kbyte sectors SST25VF040B devices significantly improve perfor- - Uniform 32-Kbyte overlay blocks mance and reliability, while lowering power consump- - Uniform 64-Kbyte overlay blocks tion. The devices write (Program or Erase) with a single Fast Erase and Byte Program: power supply of 2.7V-3.6V for SST25VF040B. The total - Chip Erase Time: 35 ms (typical) energy consumed is a function of the applied voltage, current, and time of application. Since for any given - Sector/Block Erase Time: 18 ms (typical) voltage range, the SuperFlash technology uses less - Byte Program Time: 7 s (typical) current to program and has a shorter erase time, the Auto Address Increment (AAI) Programming: total energy consumed during any erase or program - Decrease total chip programming time over operation is less than alternative Flash memory tech- Byte Program operations nologies. End of Write Detection: See Figure 2-1 for pin assignments. - Software polling the BUSY bit in STATUS Register - Busy Status readout on SO pin in AAI Mode Hold Pin (HOLD ): - Suspends a serial sequence to the memory without deselecting the device Write Protection (WP ): - Enables/Disables the Lock-Down function of the STATUS register Software Write Protection: - Write protection through Block Protection bits in STATUS register Temperature Range: - Commercial: 0C to +70C - Industrial: -40C to +85C All devices are RoHS compliant 2005-2020 Microchip Technology Inc. DS20005051E-page 1SST25VF040B TO OUR VALUED CUSTOMERS It is our intention to provide our valued customers with the best documentation possible to ensure successful use of your Microchip products. To this end, we will continue to improve our publications to better suit your needs. Our publications will be refined and enhanced as new volumes and updates are introduced. If you have any questions or comments regarding this publication, please contact the Marketing Communications Department via E- mail at docerrors microchip.com. We welcome your feedback. Most Current Data Sheet To obtain the most up-to-date version of this data sheet, please register at our Worldwide Website at:

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
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