Product Information

SST25VF040B-50-4C-SAF-T

SST25VF040B-50-4C-SAF-T electronic component of Microchip

Datasheet
NOR Flash 2.7V to 3.6V 4Mbit SPI Serial Flash

Manufacturer: Microchip
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Price (USD)

1: USD 1.2921 ea
Line Total: USD 1.29

1735 - Global Stock
Ships to you between
Thu. 09 May to Mon. 13 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2360 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1
Multiples : 1
1 : USD 1.4377
10 : USD 1.4027
25 : USD 1.3886
100 : USD 1.3775
250 : USD 1.3499
500 : USD 1.3499
1000 : USD 1.3499

1735 - Global Stock


Ships to you between Thu. 09 May to Mon. 13 May

MOQ : 1
Multiples : 1
1 : USD 1.2921
25 : USD 1.2679
100 : USD 1.2317

3152 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 250
Multiples : 250
250 : USD 1.7433

2360 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 7
Multiples : 1
7 : USD 1.3964
10 : USD 1.3822
25 : USD 1.368
100 : USD 1.3537
250 : USD 1.3267

     
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SST25VF040B 4-Mbit SPI Serial Flash Features Packages Single Voltage Read and Write Operations: 8-lead SOIC (208 mils), 8-lead SOIC (150 mils) and 8-contact WSON (6 mm x 5 mm) - 2.7V-3.6V Serial Interface Architecture: Description - SPI Compatible: Mode 0 and Mode 3 High-Speed Clock Frequency: The 25 series Serial Flash family features a four-wire, SPI-compatible interface that allows for a low pin-count - Up to 50 MHz package which occupies less board space and ulti- Superior Reliability: mately lowers total system costs. The SST25VF040B - Endurance: 100,000 Cycles (typical) devices are enhanced with improved operating fre- - Greater than 100 years Data Retention quency and even lower power consumption. Low-Power Consumption: SST25VF040B SPI serial Flash memories are manu- - Active Read Current: 10 mA (typical) factured with proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and - Standby Current: 5 A (typical) thick-oxide tunneling injector attain better reliability and Flexible Erase Capability: manufacturability compared with alternate approaches. - Uniform 4-Kbyte sectors SST25VF040B devices significantly improve perfor- - Uniform 32-Kbyte overlay blocks mance and reliability, while lowering power consump- - Uniform 64-Kbyte overlay blocks tion. The devices write (Program or Erase) with a single Fast Erase and Byte Program: power supply of 2.7V-3.6V for SST25VF040B. The total - Chip Erase Time: 35 ms (typical) energy consumed is a function of the applied voltage, current, and time of application. Since for any given - Sector/Block Erase Time: 18 ms (typical) voltage range, the SuperFlash technology uses less - Byte Program Time: 7 s (typical) current to program and has a shorter erase time, the Auto Address Increment (AAI) Programming: total energy consumed during any erase or program - Decrease total chip programming time over operation is less than alternative Flash memory tech- Byte Program operations nologies. End of Write Detection: See Figure 2-1 for pin assignments. - Software polling the BUSY bit in STATUS Register - Busy Status readout on SO pin in AAI Mode Hold Pin (HOLD ): - Suspends a serial sequence to the memory without deselecting the device Write Protection (WP ): - Enables/Disables the Lock-Down function of the STATUS register Software Write Protection: - Write protection through Block Protection bits in STATUS register Temperature Range: - Commercial: 0C to +70C - Industrial: -40C to +85C All devices are RoHS compliant 2005-2020 Microchip Technology Inc. DS20005051E-page 1SST25VF040B TO OUR VALUED CUSTOMERS It is our intention to provide our valued customers with the best documentation possible to ensure successful use of your Microchip products. To this end, we will continue to improve our publications to better suit your needs. Our publications will be refined and enhanced as new volumes and updates are introduced. If you have any questions or comments regarding this publication, please contact the Marketing Communications Department via E- mail at docerrors microchip.com. We welcome your feedback. Most Current Data Sheet To obtain the most up-to-date version of this data sheet, please register at our Worldwide Website at:

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
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