Product Information

SST25VF040B-80-4I-S2AE-T

SST25VF040B-80-4I-S2AE-T electronic component of Microchip

Datasheet
Microchip Technology Flash Memory 2.7V to 3.6V 4Mbit SPI Serial Flash

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - Global Stock

MOQ : 1
Multiples : 1
1 : USD 1.0603
10 : USD 0.9702
25 : USD 0.8662
100 : USD 0.8039
2100 : USD 0.8039
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
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Supply Voltage - Max
Supply Current - Max
Minimum Operating Temperature
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Cnhts
Hts Code
Mxhts
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SST25VF040B 4 Mbit SPI Serial Flash Features Product Description Single Voltage Read and Write Operations The 25 series Serial Flash family features a four-wire, SPI-compatible interface that allows for a low pin-count - 2.7-3.6V package which occupies less board space and ulti- Serial Interface Architecture mately lowers total system costs. The SST25VF040B - SPI Compatible: Mode 0 and Mode 3 devices are enhanced with improved operating fre- High Speed Clock Frequency quency and even lower power consumption. - Up to 50 MHz SST25VF040B SPI serial flash memories are manu- Superior Reliability factured with proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and - Endurance: 100,000 Cycles (typical) thick-oxide tunneling injector attain better reliability and - Greater than 100 years Data Retention manufacturability compared with alternate approaches. Low Power Consumption: SST25VF040B devices significantly improve perfor- - Active Read Current: 10 mA (typical) mance and reliability, while lowering power consump- - Standby Current: 5 A (typical) tion. The devices write (Program or Erase) with a single Flexible Erase Capability power supply of 2.7-3.6V for SST25VF040B. The total - Uniform 4 KByte sectors energy consumed is a function of the applied voltage, - Uniform 32 KByte overlay blocks current, and time of application. Since for any given - Uniform 64 KByte overlay blocks voltage range, the SuperFlash technology uses less Fast Erase and Byte-Program: current to program and has a shorter erase time, the total energy consumed during any Erase or Program - Chip-Erase Time: 35 ms (typical) operation is less than alternative flash memory technol- - Sector-/Block-Erase Time: 18 ms (typical) ogies. - Byte-Program Time: 7 s (typical) The SST25VF040B device is offered in an 8-lead SOIC Auto Address Increment (AAI) Programming (200 mils), 8-lead SOIC (150 mils), and 8-contact - Decrease total chip programming time over WSON (6mm x 5mm) packages. See Figure 2-1 for pin Byte-Program operations assignments. End-of-Write Detection - Software polling the BUSY bit in Status Register - Busy Status readout on SO pin in AAI Mode Hold Pin (HOLD ) - Suspends a serial sequence to the memory without deselecting the device Write Protection (WP ) - Enables/Disables the Lock-Down function of the status register Software Write Protection - Write protection through Block-Protection bits in status register Temperature Range - Commercial: 0C to +70C - Industrial: -40C to +85C Packages Available - 8-lead SOIC (200 mils) - 8-lead SOIC (150 mils) - 8-contact WSON (6mm x 5mm) All devices are RoHS compliant 2005-2017 Microchip Technology Inc. DS20005051D-page 1SST25VF040B TO OUR VALUED CUSTOMERS It is our intention to provide our valued customers with the best documentation possible to ensure successful use of your Microchip products. To this end, we will continue to improve our publications to better suit your needs. Our publications will be refined and enhanced as new volumes and updates are introduced. If you have any questions or comments regarding this publication, please contact the Marketing Communications Department via E- mail at docerrors microchip.com. We welcome your feedback. Most Current Data Sheet To obtain the most up-to-date version of this data sheet, please register at our Worldwide Web site at:

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
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