Product Information

SST25VF064C-80-4I-S3AE

SST25VF064C-80-4I-S3AE electronic component of Microchip

Datasheet
Microchip Technology Flash Memory 64M (8Mx8) 80MHz Industrial Temp

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - Global Stock

MOQ : 68
Multiples : 1
68 : USD 3.7838
272 : USD 3.5779
N/A

Obsolete
0 - Global Stock

MOQ : 1
Multiples : 1
1 : USD 3.6036
10 : USD 3.0076
25 : USD 2.8898
100 : USD 2.8422
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Series
Memory Size
Maximum Clock Frequency
Interface Type
Organisation
Timing Type
Data Bus Width
Supply Voltage - Min
Supply Voltage - Max
Supply Current - Max
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Architecture
Speed
Memory Type
Operating Temperature Range
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
LoadingGif

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Obsolete Device Please contact Microchip Sales for replacement information. 64 Mbit SPI Serial Dual I/O Flash SST25VF064C EOL Data Sheet The SST 25 series Serial Flash family features a four-wire, SPI-compatible inter- face that allows for a low pin-count package which occupies less board space and ultimately lowers total system costs. SST25VF064C SPI serial flash memory is manufactured with SST proprietary, high-performance CMOS SuperFlash tech- nology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. Features Single Voltage Read and Write Operations Page-Program 2.7-3.6V 256 Bytes per page Single and Dual Input support Serial Interface Architecture Fast Page-Program time in 1.5 ms (typical) SPI Compatible: Mode 0 and Mode 3 End-of-Write Detection Dual Input/Output Support Software polling the BUSY bit in Status Register Fast-Read Dual-Output Instruction Write Protection (WP ) Fast-Read Dual I/O Instruction Enables/Disables the Lock-Down function of the High Speed Clock Frequency status register 80 MHz for High-Speed Read (0BH) Software Write Protection 75 MHz for Fast-Read Dual-Output (3BH) 50 MHz for Fast-Read Dual I/O (BBH) Write protection through Block-Protection bits in status 33 MHz for Read Instruction (03H) register Superior Reliability Security ID Endurance: 100,000 Cycles (typical) One-Time Programmable (OTP) 256 bit, Secure ID Greater than 100 years Data Retention - 64 bit Unique, Factory Pre-Programmed identifier - 192 bit User-Programmable Low Power Consumption Temperature Range Active Read Current: 12 mA (typical 80 MHz) for sin- gle-bit read) Commercial = 0C to +70C Active Read Current: 14 mA (typical 75MHz) for dual- Industrial: -40C to +85C bit read) Standby Current: 5 A (typical) Packages Available 16-lead SOIC (300 mils) Flexible Erase Capability 8-contact WSON (6mm x 8mm) Uniform 4 KByte sectors 8-lead SOIC (200 mils) Uniform 32 KByte overlay blocks Uniform 64 KByte overlay blocks All devices are RoHS compliant Fast Erase Chip-Erase Time: 35 ms (typical) Sector-/Block-Erase Time: 18 ms (typical) 2015 Silicon Storage Technology, Inc. www.microchip.com DS20005036C 04/1564 Mbit SPI Serial Dual I/O Flash SST25VF064C EOL Data Sheet Product Description The SST 25 series Serial Flash family features a four-wire, SPI-compatible interface that allows for a low pin-count package which occupies less board space and ultimately lowers total system costs. SST25VF064C SPI serial flash memory is manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain bet- ter reliability and manufacturability compared with alternate approaches. The SST25VF064C significantly improves performance and reliability, while lowering power consump- tion. The device writes (Program or Erase) with a single power supply of 2.7-3.6V. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given volt- age range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash memory technologies. The SST25VF064C device is offered in 16-lead SOIC (300 mils), 8-contact WSON (6mm x 8mm), and 8-lead SOIC (200 mils) packages. See Figure 2 for pin assignments. 2015 Silicon Storage Technology, Inc. DS20005036C 04/15 2

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
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