Product Information

SST25WF040B-40I/SN

SST25WF040B-40I/SN electronic component of Microchip

Datasheet
Memory: Serial Flash; 4Mbit; SPI; 40MHz; 1.65÷1.95V; SO8

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5819 ea
Line Total: USD 0.58

6 - Global Stock
Ships to you between
Thu. 25 Apr to Wed. 01 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
291 - Global Stock


Ships to you between Thu. 25 Apr to Wed. 01 May

MOQ : 100
Multiples : 100
100 : USD 1.375
300 : USD 1.325
500 : USD 1.3
1000 : USD 1.2313
2500 : USD 1.1838
5000 : USD 1.1663
7500 : USD 1.1487
10000 : USD 1.1312

6 - Global Stock


Ships to you between Thu. 25 Apr to Wed. 01 May

MOQ : 1
Multiples : 1
1 : USD 0.5819

2362 - Global Stock


Ships to you between Wed. 01 May to Fri. 03 May

MOQ : 1
Multiples : 1
1 : USD 1.0925

6 - Global Stock


Ships to you between Thu. 25 Apr to Wed. 01 May

MOQ : 7
Multiples : 1
7 : USD 0.5819

     
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SST25WF040B 4 Mbit 1.8V SPI Serial Flash Features Product Description Single Voltage Read and Write Operations SST25WF040B is a member of the Serial Flash 25 - 1.65-1.95V Series family and feature a four-wire, SPI-compatible Serial Interface Architecture interface that allows for a low pin-count package which occupies less board space and ultimately lowers total - SPI Compatible: Mode 0 and Mode 3 system costs. SPI serial flash memory is manufactured High Speed Clock Frequency with proprietary, high-performance CMOS SuperFlash - 40MHz technology. The split-gate cell design and thick-oxide Dual Input/Output Support tunneling injector attain better reliability and manufac- - Fast-Read Dual-Output Instruction (3BH) turability compared with alternate approaches. - Fast-Read Dual I/O Instruction (BBH) This Serial Flash significantly improve performance Superior Reliability and reliability, while lowering power consumption. The - Endurance: 100,000 Cycles device writes (Program or Erase) with a single power supply of 1.65-1.95V. The total energy consumed is a - Greater than 20 years Data Retention function of the applied voltage, current, and time of Ultra-Low Power Consumption: application. Since for any given voltage range, the - Active Read Current: 4 mA (typical) SuperFlash technology uses less current to program - Standby Current: 7 A (typical) and has a shorter erase time, the total energy con- - Power-down Mode Standby Current: 2 A (typical) sumed during any Erase or Program operation is less Flexible Erase Capability than alternative flash memory technologies. - Uniform 4 KByte sectors SST25WF040B is offered in 8-lead SOIC and 8-contact - Uniform 64 KByte overlay blocks USON packages. See Figure 2-1 for the pin assign- ments. Page Program Mode - 256 Bytes/Page Fast Erase and Page-Program: - Chip-Erase Time: 400 ms (typical) - Sector-Erase Time: 40 ms (typical) - Block-Erase Time: 80 ms (typical) - Page-Program Time: 0.8 ms/ 256 bytes (typical) End-of-Write Detection - Software polling the BUSY bit in Status Register Hold Pin (HOLD ) - Suspend a serial sequence without deselecting the device Write Protection (WP ) - Enables/Disables the Lock-Down function of the status register Software Write Protection - Write protection through Block-Protection bits in status register Temperature Range - Industrial: -40C to +85C - Extended: -40C to +125C Packages Available - 8-lead SOIC (150 mils) - 8-contact USON (2mm x 3mm) All devices are RoHS compliant 2013-2018 Microchip Technology Inc. DS20005193E-page 1SST25WF040B TO OUR VALUED CUSTOMERS It is our intention to provide our valued customers with the best documentation possible to ensure successful use of your Microchip products. To this end, we will continue to improve our publications to better suit your needs. Our publications will be refined and enhanced as new volumes and updates are introduced. If you have any questions or comments regarding this publication, please contact the Marketing Communications Department via E- mail at docerrors microchip.com. We welcome your feedback. Most Current Data Sheet To obtain the most up-to-date version of this data sheet, please register at our Worldwide Web site at:

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
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