SST26VF032B / SST26VF032BA 3.0V 32 Mbit Serial Quad I/O (SQI) Flash Memory Security ID Features - One-Time Programmable (OTP) 2 KByte, Secure ID Single Voltage Read and Write Operations - 64 bit unique, factory pre-programmed identifier - 2.7-3.6V - User-programmable area Serial Interface Architecture Temperature Range - Nibble-wide multiplexed I/Os with SPI-like serial - Industrial: -40C to +85C command structure Packages Available - Mode 0 and Mode 3 - 8-contact WDFN (6mm x 5mm) - x1/x2/x4 Serial Peripheral Interface (SPI) Protocol - 8-lead SOIJ (5.28 mm) High Speed Clock Frequency - 24-ball TBGA (6mm x 8mm) -104 MHz max All devices are RoHS compliant Burst Modes - Continuous linear burst Product Description - 8/16/32/64 Byte linear burst with wrap-around The Serial Quad I/O (SQI) family of flash-memory Superior Reliability devices features a six-wire, 4-bit I/O interface that allows for - Endurance: 100,000 Cycles (min) low-power, high-performance operation in a low pin-count - Greater than 100 years Data Retention package. SST26VF032B/032BA also support full com- Low Power Consumption: mand-set compatibility to traditional Serial Peripheral Inter- - Active Read current: 15 mA (typical 104 MHz) face (SPI) protocol. System designs using SQI flash - Standby Current: 15 A (typical) devices occupy less board space and ultimately lower sys- Fast Erase Time tem costs. - Sector/Block Erase: 18 ms (typ), 25 ms (max) All members of the 26 Series, SQI family are manufactured - Chip Erase: 35 ms (typ), 50 ms (max) with proprietary, high-performance CMOS SuperFlash Page-Program technology. The split-gate cell design and thick-oxide tun- neling injector attain better reliability and manufacturability - 256 Bytes per page in x1 or x4 mode compared with alternate approaches. End-of-Write Detection SST26VF032B/032BA significantly improve performance - Software polling the BUSY bit in status register and reliability, while lowering power consumption. These Flexible Erase Capability devices write (Program or Erase) with a single power supply - Uniform 4 KByte sectors of 2.7-3.6V. The total energy consumed is a function of the - Four 8 KByte top and bottom parameter overlay applied voltage, current, and time of application. Since for blocks any given voltage range, the SuperFlash technology uses - One 32 KByte top and bottom overlay block less current to program and has a shorter erase time, the - Uniform 64 KByte overlay blocks total energy consumed during any Erase or Program opera- Write-Suspend tion is less than alternative flash memory technologies. - Suspend Program or Erase operation to access SST26VF032B/032BA are offered in 8-contact WDFN another block/sector (6mm x 5 mm), 8-lead SOIJ (5.28 mm), and 24-ball Software Reset (RST) mode TBGA(6mm x 8mm). See Figure 2-2 for pin assignments. Software Write Protection Two configurations are available upon order. - Individual-Block Write Protection with permanent SST26VF032B default at power-up has the WP and lock-down capability HOLD pins enabled, and the SIO3 and SIO4 pins dis- abled, to initiate SPI-protocol operations. - 64 KByte blocks, two 32 KByte blocks, and SST26VF032BA default at power-up has the WP and eight 8 KByte parameter blocks HOLD pins disabled, and the SIO3 and SIO4 pins - Read Protection on top and bottom 8 KByte enabled, to initiate Quad I/O operations. See I/O Con- parameter blocks figuration (IOC) on page 12 for more information about configuring WP /HOLD and SIO3/SIO4 pins. 2015 Microchip Technology Inc. DS20005218C-page 1SST26VF032B / SST26VF032BA TO OUR VALUED CUSTOMERS It is our intention to provide our valued customers with the best documentation possible to ensure successful use of your Microchip products. To this end, we will continue to improve our publications to better suit your needs. Our publications will be refined and enhanced as new volumes and updates are introduced. If you have any questions or comments regarding this publication, please contact the Marketing Communications Department via E-mail at docerrors microchip.com. We welcome your feedback. Most Current Data Sheet To obtain the most up-to-date version of this data sheet, please register at our Worldwide Web site at: