Product Information

SST26VF032BT-104I/MF

SST26VF032BT-104I/MF electronic component of Microchip

Datasheet
Flash Memory 32Mb 2.7V-3.6V SQI Flash Memory

Manufacturer: Microchip
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Price (USD)

1: USD 2.576 ea
Line Total: USD 2.58

17903 - Global Stock
Ships to you between
Mon. 13 May to Wed. 15 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3589 - Warehouse 1


Ships to you between Tue. 07 May to Mon. 13 May

MOQ : 100
Multiples : 100
100 : USD 2.8375
250 : USD 2.7625
500 : USD 2.675
2000 : USD 2.625
4000 : USD 2.6125
6000 : USD 2.6
8000 : USD 2.5875
10000 : USD 2.575

17903 - Warehouse 2


Ships to you between Mon. 13 May to Wed. 15 May

MOQ : 1
Multiples : 1
1 : USD 2.576
10 : USD 2.5645
25 : USD 2.53
100 : USD 2.53
250 : USD 2.53
500 : USD 2.53
1000 : USD 2.4725
4000 : USD 2.461

     
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SST26VF032B/SST26VF032BA 2.5V/3.0V 32-Mbit Serial Quad I/O (SQI) Flash Memory Security ID: Features - One-Time Programmable (OTP) 2-KByte, Secure ID: Single Voltage Read and Write Operations: - 64-bit unique, factory preprogrammed identifier - 2.7V-3.6V or 2.3V-3.6V - User-programmable area Serial Interface Architecture: Temperature Range: - Nibble-wide multiplexed I/Os with SPI-like serial - Industrial: -40C to +85C command structure - Industrial Plus: -40C to +105C - Mode 0 and Mode 3 - Extended: -40C to +125C - x1/x2/x4 Serial Peripheral Interface (SPI) Protocol Automotive AEC-Q100 Grade 1, Grade 2 and High-Speed Clock Frequency: Grade 3 - 2.7V-3.6V: 104 MHz maximum Packages Available: - 2.3V-3.6V: 80 MHz maximum - 8-contact WDFN (6 mm x 5 mm) Burst Modes: - 8-lead SOIJ (5.28 mm) - Continuous linear burst - 24-ball TBGA (6 mm x 8 mm) - 8/16/32/64 Byte linear burst with wrap-around All Devices are RoHS Compliant Superior Reliability: - Endurance: 100,000 Cycles (minimum) Product Description - Greater than 100 years Data Retention The Serial Quad I/O (SQI) family of Flash memory Low-Power Consumption: devices features a six-wire, 4-bit I/O interface that allows for - Active Read current: 15 mA (typical 104 MHz) low-power, high-performance operation in a low pin-count - Standby Current: 15 A (typical) package. SST26VF032B/032BA also support full com- Fast Erase Time: mand-set compatibility to traditional Serial Peripheral Inter- face (SPI) protocol. System designs using SQI Flash - Sector/Block Erase: 18 ms (typ), 25 ms devices occupy less board space and ultimately lower (maximum) system costs. - Chip Erase: 35 ms (typical), 50 ms (maximum) Page-Program: All members of the 26 Series, SQI family are manufactured with proprietary, high-performance CMOS SuperFlash - 256 bytes per page in x1 or x4 mode technology. The split-gate cell design and thick-oxide tun- End-of-Write Detection: neling injector attain better reliability and manufacturability - Software polling BUSY bit in STATUS register compared with alternate approaches. Flexible Erase Capability: SST26VF032B/032BA significantly improve performance - Uniform 4-Kbyte sectors and reliability, while lowering power consumption. These - Four 8-KByte top and bottom parameter overlay devices write (Program or Erase) with a single power supply blocks of 2.3-3.6V. The total energy consumed is a function of the - One 32-Kbyte top and bottom overlay block applied voltage, current, and time of application. Since for - Uniform 64-Kbyte overlay blocks any given voltage range, the SuperFlash technology uses Write-Suspend: less current to program and has a shorter erase time, the total energy consumed during any Erase or Program opera- - Suspend Program or Erase operation to access tion is less than alternative Flash memory technologies. another block/sector Software Reset (RST) mode Two configurations are available upon order. SST26VF032B default at power-up has the WP and Software Write Protection: HOLD pins enabled, and the SIO2 and SIO3 pins - Individual-Block Write Protection with permanent disabled, to initiate SPI-protocol operations. lock-down capability SST26VF032BA default at power-up has the WP and - 64-Kbyte blocks, two 32-Kbyte blocks, and HOLD pins disabled, and the SIO2 and SIO3 pins eight 8-Kbyte parameter blocks enabled, to initiate Quad I/O operations. See - Read Protection on top and bottom 8-Kbyte Section 4.5.8 I/O Configuration (IOC) for more parameter blocks information about configuring WP /HOLD and SIO2/ SIO3 pins. See Figure 2-1 for pin assignments. 2013-2020 Microchip Technology Inc. DS20005218H-page 1SST26VF032B/SST26VF032BA TO OUR VALUED CUSTOMERS It is our intention to provide our valued customers with the best documentation possible to ensure successful use of your Microchip products. To this end, we will continue to improve our publications to better suit your needs. Our publications will be refined and enhanced as new volumes and updates are introduced. If you have any questions or comments regarding this publication, please contact the Marketing Communications Department via E-mail at docerrors microchip.com. We welcome your feedback. Most Current Data Sheet To obtain the most up-to-date version of this data sheet, please register at our Worldwide Website at:

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
AT9
ATM
Atmel
Atmel Wireless (VA)
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Microchip / Microsemi
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Microchip Tech
MICROCHIP TECH.
Microchip Technology
Microchip Technology Micrel
Microchip Technology / Atmel
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MICROCHIPDIRECT
MICROSEMI
Microsemi Analog Mixed Signal Group
Microsemi Analog Mixed Signal Group [MIL]
Microsemi Commercial Components Group
MICROSEMI COMMUNICATIONS INC.
Microsemi Consumer Medical Product Group
Microsemi Corporation
Microsemi FTD
Microsemi Power Management Group
Microsemi Power Products Group
Microsemi SoC
MICROSEMI/LAWRENCE
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MSC
Roving Networks
ROVING NETWORKS INC
ROVING NETWORKS INC.
ROVING NETWORKS, INC.
Silicon Storage
SILICON STORAGE TECH
SILICON STORAGE TECHNOLOGY
Supertex
Vectron
VECTRON INTERNATIONAL
VECTRON INTL
Vitesse Microsemi
Vitesse / Microsemi

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