TC7660EOA

TC7660 Charge Pump DC-to-DC Voltage Converter Features Package Types Wide Input Voltage Range: +1.5V to +10V PDIP/CERDIP/SOIC Efficient Voltage Conversion (99.9%, typ) Excellent Power Efficiency (98%, typ) + NC 1 8 V Low Power Consumption: 80 A (typ) V = 5V IN + 2 7 OSC CAP Low Cost and Easy to Use TC7660 LOW GND 3 6 - Only Two External Capacitors Required VOLTAGE (LV) Available in 8-Pin Small Outline (SOIC), 8-Pin - 4 5 V CAP OUT PDIP and 8-Pin CERDIP Packages Improved ESD Protection (3 kV HBM) No External Diode Required for High-Voltage General Description Operation The TC7660 device is a pin-compatible replacement Applications for the industry standard 7660 charge pump voltage converter. It converts a +1.5V to +10V input to a corre- RS-232 Negative Power Supply sponding -1.5V to -10V output using only two low-cost Simple Conversion of +5V to 5V Supplies capacitors, eliminating inductors and their associated + Voltage Multiplication V = n V cost, size and electromagnetic interference (EMI). OUT Negative Supplies for Data Acquisition Systems The on-board oscillator operates at a nominal fre- and Instrumentation quency of 10 kHz. Operation below 10 kHz (for lower supply current applications) is possible by connecting an external capacitor from OSC to ground. The TC7660 is available in 8-Pin PDIP, 8-Pin Small Outline (SOIC) and 8-Pin CERDIP packages in commercial and extended temperature ranges. Functional Block Diagram + + V CAP 82 Voltage 7 RC 4 OSC Level 2 CAP- Oscillator Translator 6 LV 5 V OUT InInterternnalal VoVoltltageage Regulator Regulator Logic Network TC7660 3 GND 2002-2011 Microchip Technology Inc. DS21465C-page 1TC7660 * Notice: Stresses above those listed under Maximum Rat- 1.0 ELECTRICAL ings may cause permanent damage to the device. This is a CHARACTERISTICS stress rating only and functional operation of the device at those or any other conditions above those indicated in the Absolute Maximum Ratings* operational sections of this specification is not intended. Expo- sure to maximum rating conditions for extended periods may Supply Voltage .............................................................+10.5V affect device reliability. LV and OSC Inputs Voltage: (Note 1) + .............................................. -0.3V to V for V < 5.5V SS + + + .....................................(V 5.5V) to (V ) for V > 5.5V I S + Current into LV .........................................20 A for V > 3.5V 1 8 + Output Short Duration (V 5.5V)...............Continuous V SUPPLY 2 7 I L + (+5V) Package Power Dissipation: (T 70C) TC7660 C A 1 C OSC 3 6 8-Pin CERDIP ....................................................800 mW 10 F 4 5 R 8-Pin PDIP .........................................................730 mW L 8-Pin SOIC.........................................................470 mW V Operating Temperature Range: OUT C Suffix.......................................................0C to +70C C I Suffix .....................................................-25C to +85C 2 10 F + E Suffix....................................................-40C to +85C M Suffix .................................................-55C to +125C Storage Temperature Range.........................-65C to +160C FIGURE 1-1: TC7660 Test Circuit. ESD protection on all pins (HBM) ................................. 3kV Maximum Junction Temperature................................ 150C ELECTRICAL SPECIFICATIONS + Electrical Characteristics: Unless otherwise noted, specifications measured over operating temperature range with V = 5V, C = 0, refer to test circuit in Figure 1-1. OSC Parameters Sym Min Typ Max Units Conditions + Supply Current I 80 180 A R = L + Supply Voltage Range, High V 3.0 10 V Min T Max, R = 10 k , LV Open A L H + Supply Voltage Range, Low V 1.5 3.5 V Min T Max, R = 10 k , LV to GND L A L Output Source Resistance 70 100 I =20 mA, T = +25C R OUT A OUT 120 I =20 mA, T +70C (C Device) OUT A 130 I =20 mA, T +85C (E and I Device) OUT A 104 150 I =20 mA, T +125C (M Device) OUT A + 150 300 V = 2V, I = 3 mA, LV to GND OUT 0C T +70C A + 160 600 V = 2V, I = 3 mA, LV to GND OUT -55C T +125C (M Device) A Oscillator Frequency 10 kHz Pin 7 open f OSC Power Efficiency P 95 98 % R = 5 k L EFF Voltage Conversion Efficiency 97 99.9 % R = V L OUTEFF + Oscillator Impedance Z 1.0 M V = 2V OSC + 100 k V = 5V + Note 1: Destructive latch-up may occur if voltages greater than V or less than GND are supplied to any input pin. DS21465C-page 2 2002-2011 Microchip Technology Inc.