USB508xxC WWW.Microsemi .COM USB50803C thru USB50824C, e3 Bidirectional Low Capacitance TVSarray SCOTTSDALE DIVISION DESCRIPTION APPEARANCE This Transient Voltage Suppressor (TVS) array is packaged in an SO-8 configuration giving protection to 2 Bidirectional data or interface lines. It is designed for use in applications where very low capacitance protection is required at the board level from voltage transients caused by electrostatic discharge (ESD) as defined in IEC 61000-4- 2, electrical fast transients (EFT) per IEC 61000-4-4 and effects of secondary lightning. It is also available with either Tin-Lead plated terminations or as RoHS Compliant with annealed matte-Tin finish by adding an e3 suffix to the part number*. Using the schematic on the second page, pins 1 & 2 are tied together for the first protected line, and pins 7 & 8 are tied together to the ground. The same would then occur for a second protected line where pins 3 & 4 are tied together and pins 5 & 6 are SO8 tied together to the ground. These may also be switched in polarity connections since the electrical features are the same in each antiparallel (opposite facing) leg when the pins are tied together in this manner for bidirectional protection. These TVS arrays have a peak power rating of 500 watts for an 8/20 sec pulse. This array is suitable for protection of sensitive circuitry consisting of TTL, CMOS DRAMs, SRAMs, HCMOS, HSIC microprocessors, UNIVERSAL SERIAL BUS (USB) and I/O transceivers. The USB508XXC product provides board level protection from static electricity and other induced voltage surges that can damage or upset sensitive circuitry. IMPORTANT: For the most current data, consult MICROSEMIs website: USB508xxC WWW.Microsemi .COM USB50803C thru USB50824C, e3 Bidirectional Low Capacitance TVSarray SCOTTSDALE DIVISION SYMBOLS & DEFINITIONS Symbol Definition Standoff Voltage: Maximum dc voltage that can be applied over the operating temperature range. V WM V must be selected to be equal or be greater than the operating voltage of the line to be protected. WM V Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current BR Clamping Voltage: Maximum clamping voltage across the TVS device when subjected to a given current at a V C pulse time of 20 s. I Standby Current: Leakage current at V D WM. C Capacitance: Capacitance of the TVS as defined 0 volts at a frequency of 1 MHz and stated in picofarads. GRAPHS 8/20s 500W Pulse Figure 1 Figure 2 Peak Pulse Power Vs Pulse Time t = sec Pulse Wave Form OUTLINE AND SCHEMATIC INCHES MILLIMETERS DIM PAD LAYOUT MIN MAX MIN MAX A 0.188 0.197 4.77 5.00 B 0.150 0.158 3.81 4.01 C 0.053 0.069 1.35 1.75 D 0.011 0.021 0.28 0.53 F 0.0160 0.050 0.41 1.27 G 0.050 BSC 1.27 BSC J 0.006 0.010 0.15 0.25 K 0.004 0.008 0.10 0.20 L 0.189 0.206 4.80 5.23 P 0.228 0.244 5.79 6.19 OUTLINE SCHEMATIC Copyright 2005 Microsemi Page 2 6-28-2005 REV G Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Ppp Peak Pulse Power (W)