Supertex inc. VN2410 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertexs well-proven, Low power drive requirement silicon-gate manufacturing process. This combination Ease of paralleling produces a device with the power handling capabilities Low C and fast switching speeds ISS of bipolar transistors and the high input impedance and Excellent thermal stability positive temperature coefficient inherent in MOS devices. Integral source-drain diode Characteristic of all MOS structures, this device is free High input impedance and high gain from thermal runaway and thermally-induced secondary breakdown. Applications Motor controls Supertexs vertical DMOS FETs are ideally suited to a Converters wide range of switching and amplifying applications where Amplifiers very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching Switches speeds are desired. Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Ordering Information Product Summary R Part Number Package Option Packing I DS(ON) DSS BV /BV DSS DGS (min) (max) VN2410L-G TO-92 1000/Bag 240V 10 1.0A VN2410L-G P002 VN2410L-G P003 Pin Configuration VN2410L-G P005 TO-92 2000/Reel VN2410L-G P013 VN2410L-G P014 -G denotes a lead (Pb)-free / RoHS compliant package. Contact factory for Wafer / Die availablity. DRAIN Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant. SOURCE Absolute Maximum Ratings Parameter Value GATE TO-92 Drain-to-source voltage BV DSS Drain-to-gate voltage BV DGS Gate-to-source voltage 20V Product Marking O O Operating and storage temperature -55 C to +150 C Si VN YY = Year Sealed Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation 2410L WW = Week Sealed of the device at the absolute rating level may affect device reliability. All voltages are YYWW = Green Packaging referenced to device ground. Package may or may not include the following marks: Si or Typical Thermal Resistance TO-92 Package ja O TO-92 132 C/W Doc. DSFP-VN2410 Supertex inc. C081913 www.supertex.comVN2410 Thermal Characteristics I I Power Dissipation D D Package I I O DR DRM T = 25 C (continuous) (pulsed) C TO-92 190mA 1.7A 1.0W 190mA 1.7A Notes: I (continuous) is limited by max rated T . D j O Electrical Characteristics (T = 25 C unless otherwise specified) A Sym Parameter Min Typ Max Units Conditions BV Drain-to-source breakdown voltage 240 - - V V = 0V, I = 100A DSS GS D V Gate threshold voltage 0.8 - 2.0 V V = V , I = 1.0mA GS(th) GS DS D I Gate body leakage - - 100 nA V = 20V, V = 0V GSS GS DS - - 10 V = 0V, V = 120V GS DS I Zero gate voltage drain current A V = 0V, V = 120V, DSS GS DS - - 500 T = 125C A I On-state drain current 1.0 - - A V = 10V, V = 15V D(ON) GS DS - - 10 V = 2.5V, I = 100mA GS D R Static drain-to-source on-state resistance DS(ON) - - 10 V = 10V, I = 500mA GS D O R Change in R with temperature - 1.0 1.4 %/ C V = 10V, I = 500mA DS(ON) DS(ON) GS D G Forward transductance 300 - - mmho V = 10V, I = 500mA FS DS D C Input capacitance - - 125 ISS V = 0V, GS C Common source output capacitance - - 50 pF V = 25V, OSS DS f = 1.0MHz C Reverse transfer capacitance - - 20 RSS t Rise time - - 8.0 r V = 60V, t Turn-on delay time - - 8.0 DD d(ON) ns I = 400mA, D t Fall time - - 24 f R = 25 GEN t Turn-off delay time - - 23 d(OFF) V Diode forward voltage drop - 1.2 - V V = 0V, I = 190mA SD GS SD Notes: O 1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 10V VDD 90% INPUT Pulse R L 10% Generator OUTPUT 0V t t (ON) (OFF) R GEN t t t t d(ON) r d(OFF) f VDD INPUT D.U.T. 10% 10% OUTPUT 0V 90% 90% Doc. DSFP-VN2410 Supertex inc. C081913 2 www.supertex.com