2N3904 Features Halogen Free Available Upon Request By Adding Suffix-H Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating NPN General Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Purpose Amplifier Maximum Ratings 25C Unless Otherwise Specified Operating Junction Temperature Range: -55 to +150 Storage Temperature Range: -55 to +150 Thermal Resistance: 200/W Junction to Ambient Parameter Symbol Rating Unit Collector-Base Voltage V 60 V CBO Collector-Emitter Voltage V 40 V CEO Emitter-Base Voltage V 6 V EBO TO-92 Continuous Collector Current I 200 mA C Power Dissipation P 625 mW D A E Internal Structure B 1 2 3 G C B 1.EMITTER C 2.BASE 3.COLLECTOR E D DIMENSIONS INCHES MM DIM NOTE MIN MAX MIN MAX A 0.169 0.185 4.30 4.70 B 0.169 0.185 4.30 4.70 C 0.500 ----- 12.70 ----- D 0.015 0.022 0.38 0.55 E 0.130 0.146 3.30 3.70 0.095 0.105 2.42 2.67 Straight Lead G 0.173 0.220 4.40 5.60 Bent Rev.3-2-12012020 1/4 MCCSEMI.COM2N3904 Electrical Characteristics T =25C Unless Otherwise Specified A Parameter Symbol Min Typ Max Units Conditions Collector-Base Breakdown Voltage V 60 V I =10A, I =0 (BR)CBO C E Collector-Emitter Breakdown Voltage* V 40 V I =1mA, I =0 (BR)CEO C B Emitter-Base Breakdown Voltage V 6 V I =10A, I =0 (BR)EBO E C Base Cutoff Current I 0.05 A V =30V, V =3V BL CE BE Collector Cut-off Current I 0.05 A V =30V, V =3V CEX CE BE h V =1V, I =0.1mA 40 FE(1) CE C h V =1V, I =1mA 70 FE(2) CE C h V =1V, I =10mA DC Current Gain* 100 300 FE(3) CE C h V =1V, I =50mA 60 FE(4) CE C h V =1V, I =100mA 30 FE(5) CE C I =10mA, I =1mA 0.2 V C B V Collector-Emitter Saturation Voltage CE(sat) I =50mA, I =5mA 0.4 V C B I =10mA, I =1mA 0.65 0.85 V C B Base-Emitter Saturation Voltage V BE(sat) 0.95 V I =50mA, I =5mA C B Transition Frequency f 250 MHz V =20V, I =10mA, f=100MHz T CE C Delay Time t 35 ns V =3V, V =0.5V, I =10mA, d CC BE C I =1mA Rise Time t 35 ns B1 r Storage Time t 200 ns s V =3V, I =10mA, I =I =1mA CC C B1 B2 t Fall Time 50 ns f C V =5V, I =0,f=1MHz Output Capacitance 4pF obo CB E C V =0.5V, I =0, f=1MHz Input Capacitance 8pF ibo BE C V =5V,I =0.1mA,f=10Hz to CE C Noise Figure N 5 dB F 15.7KHz,R =1K S *.Pulse test: Pulse Width300s,Duty Cycle2.0%. Rev.3-2-12012020 2/4 MCCSEMI.COM