2N7002 K Features High Density Cell Design for Low R DS(ON) Voltage Controlled Small Signal Switch ESD Protected up to 2KV (HBM) Epoxy Meets UL 94 V-0 Flammability Rating N-Channel Moisture Sensitivity Level 1 MOSFET Halogen Free. Green Device (Note 1) Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings Operating Junction Temperature Range: -55C to +150C Storage Temperature: -55C to +150C SOT-23 Thermal Resistance: 357C/W Junction to Ambient A Parameter Symbol Rating Unit D V Drain-Source Voltage 60 V DS 3 Gate-Source Voltage V 20 V GS B C I 0.34 A Drain Current-Continuous D 1 2 F E Power Dissipation P 0.35 W D Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. G H J L K DIMENSIONS Internal Structure INCHES MM DIM NOTE MIN MAX MIN MAX D A 0.110 0.120 2.80 3.04 B 0.083 0.104 2.10 2.64 1. * 7 E C 0.047 0.055 1.20 1.40 2. D 0.034 0.041 0.85 1.05 3. G E 0.067 0.083 1.70 2.10 F 0.018 0.024 0.45 0.60 Marking:72K G 0.01 0.15 0.0004 0.006 S H 0.035 0.043 0.90 1.10 J 0.003 0.007 0.08 0.18 K 0.012 0.020 0.30 0.51 L 0.020 0.50 0.007 0.20 Suggested Solder Pad Layout 0.031 0.800 0.035 0.900 0.079 inches 2.000 mm 0.037 0.950 0.037 0.950 Rev.3-6-09032021 1/5 MCCSEMI.COM 5 ,1 6285&(2N7002 K ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Drain-Source Breakdown Voltage V V =0V, I =0A V 60 (BR)DSS GS D V V =V , I = A 1.0 1.3 2.5 V Gate-Threshold Voltage GS(th) DS GS D Zero Gate Voltage Drain Current I V =48V, V =0V 1.0 A DSS DS GS A V =0V, V =0V 10 DS GS nA V =0V, V =10V Gate-Body Leakage I 200 DS GS GSS V =0V, V =5V 100 nA DS GS Diode Forward Voltage V V =0V, I =300mA V SD GS S 1.5 V =10V, I =500mA 2.5 GS D R Drain-Source On-Resistance DS(on) V =4.5V, I =200mA 3.0 GS D V =0V, I =300mA,V =25V, R GS S Q 3 0 Recovered Charge r nC dl/dt=-100A/s C 4 0 Input Capacitance iss V =10V,V =0V, f=1MHz C pF Output Capacitance DS GS 30 oss C 10 Reverse Transfer Capacitance rss V =50V,R =250 , DD L t Turn-On Time 1 0 d(on) R =50,V =10V, GS GS t 15 Turn-Off Time d(off) R =50 GEN ns V =0V, I =300mA,V =25V, GS S R Reverse Recovery Time t 3 0 rr dl/dt=-100A/s Rev.3-6- 09032021 2/5 MCCSEMI.COM