DTA143ZE FeaturesFeatures Built-In Bias Resistors Enable the Configuration of an Inverter Circuit Without Connecting External Input Resistors The Bias Resistors Consist of Thin-Film Resistors With Complete PNP Isolation to Allow Negative Biasing of the Input. They Also Have Digital Transistor the Advantage of Almost Completely Eliminating Parasitic Effects Only the On/Off Conditions Need to Be Set For Operation, Making Device Design Easy Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant Suffix Designates RoHS SOT-523 Compliant.See Ordering Information) Maximum Ratings 25C Unless Otherwise Specified A D Parameter Symbol Min Typ Max Unit 3 1:IN V Supply Voltage --- -50 --- V CC 2:GND C B 3:OUT V Input Voltage -30 --- 5.0 V IN 1 2 F E I --- -100 --- mA O Output Current H J I --- -100 --- mA C(Max) G K P Power Dissipation --- 150 --- mW D T Junction Temperature --- --- 150 J DIMENSIONS T Storage Temperature -55 --- 150 INCHES MM stg DIM NOTE MIN MAX MIN MAX Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, A 0.059 0.067 1.50 1.70 <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. B 0.030 0.033 0.75 0.85 0.057 0.069 1.45 1.75 C 0.020 0.50 TYP. D E 0.035 0.043 0.90 1.10 Device MarkingE13 G 0.000 0.004 0.00 0.10 H 0.024 0.031 0.60 0.80 J 0.004 0.008 0.10 0.20 Internal Structure K 0.006 0.014 0.15 0.35 OUT 3 Suggested Solder Pad Layout R1 IN (mm) 1 R2 2 GND(+) IN OUT GND(+) Rev.3-4-12012020 1/4 MCCSEMI.COMDTA143ZE Electrical Characteristics 25C Unless Otherwise Specified Parameter Symbol Min Typ Max Unit Conditions V =-5V, I =-100A V -0.5 --- --- V CC O I(off) Input Voltage V V =-0.3V, I =-5mA --- --- -1.3 V I(on) O O I =-5mA,I =-0.25mA V Output Voltage --- --- -0.3 V O I O(on) V =-5V Input Current I --- --- -1.8 mA I I I V =-50V, V =0 Output Current --- --- -0.5 A O(off) CC I V =-5V, I =-10mA DC Current Gain G 80 --- --- O O I R Input Resistance 3.29 4.7 6.11 K 1 R /R Resistance Ratio 8.0 10 12 2 1 V =-10V, I =5mA, f=100MHz Transition Frequency f --- 250 --- MHz CE E T Rev.3-4-12012020 2/4 MCCSEMI.COM