MMBT3906 Features Halogen Free.Gree Device (Note 1) Moisture Sensitivity Level 1 PNP Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant Suffix Designates RoHS General Purpose Compliant. See Ordering Information) Amplifier Maximum Ratings 25C Unless Otherwise Specified Operating Junction Temperature Range: -55 to +150 Storage Temperature Range: -55 to +150 Typical Thermal Resistance: 417/W Junction to Ambient SOT-23 Parameter Symbol Rating Unit A V Collector-Base Voltage -40 V CBO D V Collector-Emitter Voltage -40 V CEO V Emitter-Base Voltage -5 V B EBO C Collector Current I -200 mA C F E Power Dissipation P 300 mW D Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. G H J L K Internal Structure DIMENSIONS INCHES MM DIM NOTE MIN MAX MIN MAX C A 0.110 0.120 2.80 3.04 B 0.083 0.104 2.10 2.64 C 0.047 0.055 1.20 1.40 D 0.034 0.041 0.85 1.05 B E E 0.067 0.083 1.70 2.10 F 0.018 0.024 0.45 0.60 G 0.01 0.15 0.0004 0.006 H 0.035 0.043 0.90 1.10 J 0.003 0.007 0.08 0.18 K 0.014 0.020 0.35 0.51 L 0.007 0.020 0.20 0.50 Suggested Solder Pad Layout 0.031 0.800 0.035 0.900 0.079 inches 2.000 mm 0.037 0.950 0.037 0.950 Rev.3-3-12012020 1/4 MCCSEMI.COMMMBT3906 Electrical Characteristics 25C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions Collector-Base Breakdown Voltage V -40 V I =-10A, I =0 (BR)CBO C E (2) V I =-1mA, I =0 Collector-Emitter Breakdown Voltage -40 V (BR)CEO C B V I =-10A, I =0 Emitter-Base Breakdown Voltage -5 V (BR)EBO E C Collector-Base Cutoff Current I -100 nA V =-40V, I =0 CBO CB E Collector Cutoff Current I -50 nA V =-30V, V =-3V CEX CE BE I V =-5V, I =0 Emitter-Base Cutoff Current -100 nA EBO EB C h V =-1V, I =-10mA 100 300 FE(1) CE C (2) DC Current Gain h 60 V =-1V, I =-50mA FE(2) CE C h 30 V =-1V, I =-100mA FE(3) CE C I =-10mA, I =-1mA -0.25 V C B Collector-Emitter Saturation Voltage V CE(sat) I =-50mA, I =-5mA -0.4 V C B I =-10mA, I =-1mA -0.65 -0.85 V C B V Base-Emitter Saturation Voltage BE(sat) -0.95 V I =-50mA, I =-5mA C B f V =-20V, I =-10mA, f=100MHz Transition Frequency 250 MHz T CE C C V =-5V, I =0, f=1MHz Output Capacitance 4.5 pF cbo CB E C V =-0.5V, I =0, f=1MHz Input Capacitance 10 pF ibo B E C Noise Figure NF 4 dB V =-5V, I =100A, R =1K, f=1KHz CE C S Delay Time t 35 ns V =-3V, I =-10mA d CC C V =-0.5V, I =I =-1mA t Rise Time 35 ns BE B1 B2 r t Storage Time 225 ns V =-3V, I =-10mA s CC C I =I =-1mA Fall Time t 75 ns B1 B2 f Note: 2. Pulse Width 300s, Duty Cycle 2.0% Rev.3-3-12012020 2/4 MCCSEMI.COM